MT25QL01GBBB8E12-0AUT

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MT25QL01GBBB8E12-0AUT

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IC FLASH 1GBIT SPI 24TPBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT25QL01GBBB8E12-0AUT

  • Auf Lager7511

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Spezifikationen

Attribut Wert
Part Status Active
Base Product Number MT25QL01
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 24-TBGA
Supplier Device Package 24-T-PBGA (6x8)
Packaging Bulk
Grade Automotive
Qualification AEC-Q100

Übersicht

Description

The MT25QL01GBBB8E12-0AUT is a high-performance, low-power, multi-level cell (MLC) serial NOR Flash memory device produced by Micron Technology. It is designed for use in a wide range of applications, including automotive, industrial, and consumer electronics, where reliable and efficient storage solutions are required.
This memory device features a storage capacity of 1 Gb (gigabit) and operates through a Quad-SPI (Serial Peripheral Interface) protocol, allowing for fast data transfer rates. It supports standard, dual, and quad I/O operations, providing flexibility in interfacing and optimizing performance.
The MT25QL01GBBB8E12-0AUT operates within a wide temperature range and features enhanced reliability, making it suitable for demanding environments. It also includes security features, such as hardware-based protection, to safeguard data integrity.
This device is available in industry-standard packages, which facilitate easy integration into existing designs. Its low-power consumption makes it an ideal choice for battery-operated devices, ensuring efficient operation without compromising performance. Overall, the MT25QL01GBBB8E12-0AUT offers a robust solution for applications requiring dependable non-volatile memory.

Equivalent

The MT25QL01GBBB8E12-0AUT is a 1 Gb (128 MB) NOR Flash memory chip from Micron. Equivalent products from other manufacturers include:
1. Winbond: W25Q128JV - 128 Mb (16 MB) Serial NOR Flash.
2. Macronix: MX25L12835F - 128 Mb (16 MB) Serial NOR Flash.
3. Spansion: S25FL128S - 128 Mb (16 MB) Serial NOR Flash.
Ensure compatibility in terms of pin configuration, package type, and specific features before substituting.

Features

The MT25QL01GBBB8E12-0AUT is a high-performance 1 Gb (128 MB) NOR Flash memory part of the MT25Q series by Micron Technology. Key features include:
1. Architecture: It uses a multi-level cell (MLC) architecture for storage efficiency.
2. Interface: Supports a quad I/O SPI interface for fast data transfer.
3. Performance: Offers fast read speeds up to 166 MHz and program and erase speeds optimized for quick data handling.
4. Voltage: Operates at a voltage range of 2.7V to 3.6V.
5. Endurance: Provides a long data retention and high endurance with a minimum of 100,000 program/erase cycles.
6. Packages: Available in several package types, including WSON and BGA, for diverse application needs.
7. Security: Includes advanced security features such as block protection and a secure OTP (One-Time Programmable) area.
8. Temperature Range: Suitable for industrial applications, with an operating temperature range of -40°C to +85°C.
9. Low Power: Designed for low power consumption, making it ideal for battery-operated devices.
These features make the MT25QL01GBBB8E12-0AUT suitable for various applications requiring reliable, high-speed memory solutions.

Pinout

The MT25QL01GBBB8E12-0AUT is a serial NOR Flash memory device from Micron. It features a 1 Gb (gigabit) capacity and uses a Quad I/O interface for communication. The device is packaged in a WSON (8x6 mm, 8-lead) form factor.
Pin Count: The MT25QL01GBBB8E12-0AUT has 8 pins.
Pin Functions:
1. CS# (Chip Select): Activates the device when low; deselects when high.
2. SO/SIO1 (Serial Output/Serial Data I/O): Transfers data out of the device or serves as I/O in Quad mode.
3. WP#/SIO2 (Write Protect/Serial Data I/O): Enables hardware write protection or serves as I/O in Quad mode.
4. VSS (Ground): Ground reference for the device.
5. SI/SIO0 (Serial Input/Serial Data I/O): Transfers data into the device or serves as I/O in Quad mode.
6. SCK (Serial Clock): Provides the clock signal for communication.
7. HOLD#/SIO3 (Hold/Serial Data I/O): Pauses serial communication or serves as I/O in Quad mode.
8. VCC (Supply Voltage): Provides the power supply to the device.
This configuration allows the MT25QL01GBBB8E12-0AUT to operate efficiently in a variety of applications requiring reliable non-volatile memory.

Manufacturer

The MT25QL01GBBB8E12-0AUT is manufactured by Micron Technology, Inc. Micron is a leading global company specializing in the production of semiconductor devices, particularly memory and storage solutions. Their product range includes DRAM, NAND flash memory, and NOR flash memory, which are used in a variety of computing, consumer, networking, automotive, industrial, and mobile applications. Micron is known for its innovation in memory technology, enhancing the computing experience with faster processing speeds and increased storage capacities.

Application

The MT25QL01GBBB8E12-0AUT is a 1Gb (gigabit) NOR flash memory chip that is commonly used in applications requiring reliable and fast non-volatile storage. Typical application areas include:
1. Embedded Systems: Used in microcontrollers and microprocessors for code storage.
2. Consumer Electronics: Utilized in devices like digital cameras, portable media players, and smart home gadgets.
3. Automotive Electronics: Supports infotainment systems, navigation, and advanced driver-assistance systems (ADAS).
4. Networking Equipment: Employed in routers and switches for firmware storage.
5. Industrial Automation: Used in programmable logic controllers (PLCs) and human-machine interfaces (HMIs).
These applications benefit from its fast read speeds and high endurance.

Package

The MT25QL01GBBB8E12-0AUT is a NOR Flash memory chip from Micron Technology. It is typically available in a WSON (Wafer-Level Small Outline No-lead) package, which is a compact, leadless package ideal for space-constrained applications. This package type enhances thermal and electrical performance and is commonly used in various electronic devices that require reliable, high-speed memory solutions.

Frequently Asked Questions


Q: What is the memory density and organization of the MT25QL01GBBB8E12-0AUT?
A: It is a 1Gbit NOR Flash memory, organized as 128M x 8 bits, suitable for high-density code or data storage.


Q: What is the maximum clock frequency for SPI Quad I/O operation?
A: The device supports a maximum clock frequency of 133 MHz, enabling high-speed data transfer in Quad I/O mode.


Q: What is the operating voltage range for this memory component?
A: It operates from 2.7V to 3.6V, making it compatible with standard 3V logic systems in automotive and industrial applications.


Q: What are the typical write cycle times for page and word operations?
A: Write cycle time is 8ms for a word (page program) and 2.8ms for a page, ensuring efficient programming.


Q: Is this component qualified for automotive applications?
A: Yes, it is AEC-Q100 qualified and has an automotive grade rating, designed for reliable operation from -40°C to 125°C.


Q: What is the package type and mounting style?
A: It comes in a 24-TBGA (6x8mm) surface-mount package, specifically the 24-T-PBGA (6x8) supplier package.


Q: Does this memory support SPI Quad I/O interface or only standard SPI?
A: It supports SPI Quad I/O interface, allowing for four-bit data lines to enhance read and write throughput beyond standard SPI.


Q: What is the packaging format for this part number?
A: The device is provided in bulk packaging, suitable for volume production and automated assembly lines.


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