MT25QU01GBBB1EW9-0SIT

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MT25QU01GBBB1EW9-0SIT

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IC FLASH 1GBIT SPI 133MHZ 8WPDFN

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT25QU01GBBB1EW9-0SIT

  • Auf Lager1787

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Spezifikationen

Attribut Wert
Part Status Last Time Buy
Base Product Number MT25QU01
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms
Voltage - Supply 1.7V ~ 2V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-WPDFN (8x6) (MLP8)
Packaging Bulk

Übersicht

Description

The MT25QU01GBBB1EW9-0SIT is a high-performance serial NOR Flash memory device designed for embedded systems that require robust data storage solutions. Manufactured by Micron Technology, it offers a storage capacity of 1 gigabit (Gb) and operates on a 3V power supply, making it suitable for a wide range of applications.
Key features of this device include its advanced security features, which ensure data integrity and protection, as well as its fast read and write operations, which enhance overall system performance. The memory is organized in a way that allows for efficient data retrieval and storage, optimizing system responsiveness.
The MT25QU01GBBB1EW9-0SIT supports multiple I/O interfaces, including Quad I/O SPI, which enables high-speed data transfer, making it ideal for applications that demand quick access to data, such as automotive, industrial, and consumer electronics. Additionally, its small form factor and low power consumption are beneficial for portable and battery-operated devices. Overall, this NOR Flash memory device offers reliable performance, making it a versatile choice for modern electronic systems.

Equivalent

The MT25QU01GBBB1EW9-0SIT is a 1Gb serial NOR Flash memory chip manufactured by Micron Technology. Equivalent products from other manufacturers include:
1. W25Q80EW by Winbond: An 8Mb SPI NOR Flash.
2. S25FL256S by Cypress Semiconductor: A 256Mb SPI NOR Flash.
3. AT25SF641 by Adesto Technologies: A 64Mb serial NOR Flash.
These chips may have differences in capacity and specifications, so ensure compatibility with your application requirements.

Features

The MT25QU01GBBB1EW9-0SIT is a NOR Flash memory chip designed by Micron Technology. It features a capacity of 1 Gbit (128 MB) and uses a Serial NOR Flash memory architecture. This component operates with a voltage range typically between 2.7V and 3.6V, making it suitable for a variety of electronic applications. It supports both single and dual I/O SPI interface modes, enhancing data transfer rates and flexibility. The device includes advanced security features such as a 256-bit One-Time Programmable (OTP) area and hardware-based data protection mechanisms. It also offers fast read access times and efficient write operations, which are crucial for performance in embedded systems. The operating temperature range is typically from -40°C to +85°C, suitable for industrial applications. Additionally, the package type is a WSON (Wafer-Level Small Outline No-lead) form factor, which is compact and suitable for space-constrained designs. Overall, this NOR Flash chip is designed for reliability and efficiency in various applications, including consumer electronics, automotive, and industrial systems.

Pinout

The MT25QU01GBBB1EW9-0SIT is a serial NOR Flash memory device manufactured by Micron. It comes in a WSON (Wafer-Level Small Outline No-Lead) package with 8 pins. The primary functions of the pins are as follows:
1. Chip Select (CS#) - Activates the device.
2. Serial Data Input/Output (IO0, IO1, IO2, IO3) - Used for receiving and transmitting data in various I/O modes (Standard/Dual/Quad).
3. Serial Clock (C) - Provides the clock for communication and data transfer.
4. Write Protect/Hardware Reset (WP#/RESET#) - Provides write protection or resets the device depending on the configuration.
5. Hold (HOLD#) - Pauses communication without deselecting the device.
6. VSS - Ground reference for the device.
7. VCC - Power supply input.
This configuration allows the device to perform read, write, and erase operations efficiently, supporting a wide range of applications requiring reliable, non-volatile storage.

Manufacturer

The MT25QU01GBBB1EW9-0SIT is manufactured by Micron Technology, Inc. Micron is a leading American company specializing in the production of semiconductor devices, primarily focusing on memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops and manufactures a wide range of products including DRAM (Dynamic Random-Access Memory), NAND flash memory, and SSDs (Solid State Drives), which are used in various technology sectors such as consumer electronics, computers, mobile devices, and data centers.
Micron is known for its innovation and advancement in memory technologies, contributing significantly to the tech industry's growth by providing high-performance, reliable, and scalable memory solutions. The company has a global presence, with manufacturing facilities and research and development centers worldwide. Micron collaborates with numerous tech companies to integrate its products into a variety of applications, enhancing the performance and efficiency of electronic devices and systems.

Application

The MT25QU01GBBB1EW9-0SIT is a 1Gb serial NOR Flash memory device, typically used in applications requiring reliable and fast data storage. Common application areas include:
1. Consumer Electronics: Used in TVs, set-top boxes, and gaming consoles for firmware storage.
2. Automotive Systems: Employed in navigation systems, infotainment, and advanced driver-assistance systems (ADAS).
3. Industrial Applications: Utilized in control systems, robotics, and monitoring equipment.
4. Networking Devices: Integrated into routers, switches, and access points for configuration and boot code storage.
5. Medical Devices: Serves in devices requiring secure and stable data retention.
Its fast read/write capabilities and data integrity make it suitable for systems needing reliable and high-speed memory.

Package

The package type for the MT25QU01GBBB1EW9-0SIT is typically a WSON (Wafer-Level Small Outline No-Lead) package.

Frequently Asked Questions


Q: What is the memory size and organization of the MT25QU01GBBB1EW9-0SIT?
A: It has a 1 Gbit memory density, organized as 128M x 8 bits, suitable for high-density code and data storage.


Q: What is the maximum clock frequency for SPI operation?
A: The device supports a maximum clock frequency of 133 MHz in SPI Quad I/O mode, enabling fast read and write operations.


Q: What is the voltage supply range for this NOR Flash?
A: The operating voltage range is 1.7V to 2.0V, making it ideal for low-power and battery-powered applications.


Q: What is the typical write cycle time for a page program?
A: The typical page program time is 0.64ms, with a maximum of 2.8ms, and the word program time is 8ms.


Q: Is this component suitable for industrial temperature ranges?
A: Yes, it operates reliably over an industrial temperature range of -40°C to +85°C (TA).


Q: What package type does the MT25QU01GBBB1EW9-0SIT use?
A: It comes in an 8-WDFN Exposed Pad package, specifically an 8-WPDFN (8x6mm) MLP8 for surface mount assembly.


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