MT25QU512ABB8ESF-0AAT

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MT25QU512ABB8ESF-0AAT

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IC FLASH 512MBIT SPI 133MHZ 16SO

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT25QU512ABB8ESF-0AAT

  • Auf Lager7646

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Spezifikationen

Attribut Wert
Part Status Active
Base Product Number MT25QU512
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms
Voltage - Supply 1.7V ~ 2V
Operating Temperature -40°C ~ 105°C (TA)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SO
Packaging Tray
Grade Automotive
Qualification AEC-Q100

Übersicht

Description

The MT25QU512ABB8ESF-0AAT is a high-performance NOR Flash memory device manufactured by Micron Technology. It features a 512 Mb (megabit) storage capacity and is designed for use in embedded systems and consumer electronics that require reliable data storage and fast read access. This flash memory supports the Quad I/O Serial Peripheral Interface (SPI), which enables faster data transfer rates compared to standard SPI interfaces.
Key features include low power consumption, making it suitable for battery-powered applications, and robust data retention and endurance characteristics, ensuring long-term reliability. The device operates over a wide temperature range, which makes it versatile for various environmental conditions.
Its architecture allows for uniform 4KB sectors and 64KB blocks, facilitating efficient memory management and erasing processes. Additionally, the MT25QU512ABB8ESF-0AAT is equipped with advanced security features, such as hardware-based write protection, to safeguard data integrity against unauthorized access.
Overall, this NOR Flash memory is ideal for applications needing fast, reliable, and secure data storage with low power consumption in compact form factors.

Equivalent

The MT25QU512ABB8ESF-0AAT is a 512Mb Quad SPI NOR Flash memory chip by Micron. Equivalent products with similar specifications are available from other manufacturers, such as the W25Q512JV from Winbond, the S25FL512S from Cypress (now Infineon), and the MX25L51245G from Macronix. When selecting an equivalent, ensure compatibility in terms of voltage, package type, and operating temperature. Always consult the datasheets for detailed specifications and compatibility.

Features

The MT25QU512ABB8ESF-0AAT is a high-performance NOR Flash memory device from Micron Technology. Key features include:
1. Capacity: 512 Mb (megabits).
2. Interface: Supports a Quad SPI interface which enhances data throughput.
3. Operating Voltage: Operates at a voltage range of 2.7V to 3.6V.
4. Performance: Offers fast read speeds up to 166 MHz with XIP (eXecute In Place) capability.
5. Endurance: Designed for high endurance with a program/erase cycle rating.
6. Security: Includes security features such as a 64-bit unique identifier and a 256-bit OTP (One-Time Programmable) area.
7. Package: Available in a compact WSON package, making it suitable for space-constrained applications.
8. Temperature Range: Operates effectively within an industrial temperature range of -40°C to +85°C.
9. Applications: Ideal for use in a variety of applications including automotive, industrial, and consumer electronics.
These features make the MT25QU512ABB8ESF-0AAT suitable for applications requiring reliable and high-speed data storage solutions.

Pinout

The MT25QU512ABB8ESF-0AAT is a 512 Mb (megabit) serial NOR Flash memory device manufactured by Micron Technology. It typically comes in an 8-pin package. The primary function of this memory chip is to provide non-volatile storage, meaning it retains data even when power is removed.
The common pin functions for this type of device are as follows:
1. CS# (Chip Select): Activates the device when low.
2. SCK (Serial Clock): Provides the clock signal for data transfers.
3. SI (Serial Input)/IO0: Used for data input and also as I/O in Quad I/O mode.
4. SO (Serial Output)/IO1: Used for data output and also as I/O in Quad I/O mode.
5. WP# (Write Protect)/IO2: Protects the memory from being written to, also used as I/O in Quad I/O mode.
6. HOLD#/RESET#/IO3: Pauses communications or resets the device, also used as I/O in Quad I/O mode.
7. VCC: Power supply pin.
8. VSS: Ground reference.
The MT25QU512ABB8ESF-0AAT supports various modes and commands for read, write, and erase operations, making it suitable for code shadowing, data storage, and other applications.

Manufacturer

The MT25QU512ABB8ESF-0AAT is manufactured by Micron Technology, Inc. Micron is a leading American company in the semiconductor industry, specializing in the production of memory and storage solutions. Their products include dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices. Micron is known for its innovation and plays a significant role in the technology supply chain, serving industries such as computing, consumer electronics, automotive, and mobile telecommunications.

Application

The MT25QU512ABB8ESF-0AAT is a NOR Flash memory component commonly used in applications requiring reliable, non-volatile memory storage. Its application areas include:
1. Embedded Systems: Used in microcontrollers for storing firmware and boot code.
2. Consumer Electronics: Utilized in devices like digital cameras, set-top boxes, and smart appliances.
3. Automotive: Supports infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS).
4. Industrial: Applied in control systems, robotics, and data logging.
5. Networking Equipment: Used in routers and switches for firmware storage.
6. Medical Devices: Stores software and critical data in diagnostic and monitoring equipment.
Its reliability and fast read access make it ideal for applications requiring frequent access to stable data.

Package

The MT25QU512ABB8ESF-0AAT is a 512 Mb serial NOR Flash memory device. It typically comes in a compact package suitable for embedded applications, such as the BGA-24 (Ball Grid Array) or WSON-8 (Very-very Thin Small Outline No-lead) packages, designed to save space while providing reliable performance.

Frequently Asked Questions


Q: What is the memory size and organization of the MT25QU512ABB8ESF-0AAT?
A: It has a 512Mbit capacity organized as 64M x 8 bits, suitable for code shadowing and data storage.


Q: What voltage range does this NOR Flash support?
A: It operates from 1.7V to 2.0V, ideal for low-voltage, battery-powered automotive applications.


Q: Is this component qualified for automotive use?
A: Yes, it is AEC-Q100 qualified and rated for -40°C to 105°C, meeting strict automotive reliability standards.


Q: What is the maximum clock frequency for SPI Quad I/O operation?
A: The device supports a clock frequency of up to 133 MHz, enabling fast read and program throughput.


Q: What is the typical write cycle time for a page program?
A: Page write time is 2.8ms typical, while a word write cycle takes 8ms, ensuring efficient programming.


Q: What package options are available for this part?
A: It comes in a 16-SOIC (0.295", 7.50mm Width) package with a 16-SO supplier device package, surface mount.


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