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MT28EW128ABA1HPN-0SIT
+StücklisteIC FLASH 128MBIT PAR 56VFBGA
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HerstellerMicron Technology Inc.
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Herstellerteil #MT28EW128ABA1HPN-0SIT
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Auf Lager5968
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8, 8M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 95 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 56-VFBGA |
| Supplier Device Package | 56-VFBGA (7x9) |
| Base Product Number | MT28EW128 |
Übersicht
Description
Key characteristics include a serial interface for easy integration into systems, low power consumption, and the ability to support multiple program and erase cycles. The device operates with a voltage range of 2.7V to 3.6V, making it suitable for battery-operated applications.
Additionally, MT28EW128ABA1HPN-0SIT is designed for reliability and endurance, with features that help ensure data integrity and longevity. Its compact size and efficient performance make it a popular choice for embedded systems and other space-constrained applications. Overall, this NAND flash memory component is an essential building block for modern electronic designs needing non-volatile storage solutions.
Equivalent
Features
1. Density: 128 megabits, suitable for various applications requiring significant data storage.
2. Interface: It utilizes an ONFI (Open NAND Flash Interface) compliant interface, which facilitates compatibility and interoperability with various host controllers.
3. Organization: The chip is organized in a page format, typically supporting 2K or 4K pages, enhancing data read/write efficiency.
4. Operating Voltage: Operates at a voltage range of 2.7V to 3.6V, making it suitable for low-power applications.
5. Endurance: Designed for high endurance, supporting numerous program/erase cycles, which is crucial for applications that require frequent data updates.
6. Read/Write Speed: Offers competitive read and write speeds, ensuring fast data transfer rates for demanding applications.
7. Temperature Range: Supports industrial temperature ranges, making it ideal for use in various environments.
This NAND flash memory is commonly used in consumer electronics, automotive applications, and industrial devices.
Pinout
Key functions of the pins include:
- Data Pins (D0-D7): These are used for data input/output operations.
- Address Pins (A0-A7): These pins are used to select specific memory addresses during read/write operations.
- Chip Enable (CE): Activates the device for operation.
- Write Enable (WE): Controls the write operations.
- Read Enable (RE): Initiates read operations.
- Reset: Resets the device.
- Ready/Busy (R/B): Indicates the status of the device (ready for new commands or busy processing).
- VCC: Supplies power to the device.
- Ground (GND): Common ground connection.
This device is typically used in applications requiring high-density data storage solutions.
Manufacturer
Micron's innovations in memory technology position it as a significant supplier for consumer electronics, data centers, and enterprise solutions. The company focuses on research and development to advance memory capabilities, catering to increasing demands for higher performance and efficiency in digital devices. With a global presence, Micron operates manufacturing facilities, R&D centers, and sales offices worldwide, serving various sectors across the technology landscape.