MT29F1G08ABAEAWP:E

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MT29F1G08ABAEAWP:E

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IC FLASH 1GBIT PARALLEL 48TSOP I

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT29F1G08ABAEAWP:E

  • Auf Lager7385

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Part Status Last Time Buy
Base Product Number MT29F1G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Übersicht

Description

The MT29F1G08ABAEAWP:E is a NAND Flash memory chip produced by Micron Technology. It features a storage capacity of 1 gigabit and is organized into 128 MB blocks. This memory type is non-volatile, meaning it retains data even when powered off. It's commonly used in various electronic devices for data storage, including smartphones, tablets, and embedded systems.
The memory chip uses a single-level cell (SLC) architecture, which typically offers faster read and write speeds, enhanced durability, and a longer lifespan compared to multi-level cell (MLC) or triple-level cell (TLC) architectures. It operates at a voltage range suitable for low-power applications and supports asynchronous data transfer. Additionally, the chip includes features like error correction code (ECC) to maintain data integrity and reliability.
The MT29F1G08ABAEAWP:E is known for its compact footprint, making it ideal for space-constrained applications. It is compatible with a range of interfaces, facilitating easy integration into various systems. Overall, it is a reliable choice for applications requiring robust and efficient data storage solutions.

Equivalent

The MT29F1G08ABAEAWP:E is a NAND Flash memory chip from Micron. Equivalent products would typically be those with similar specifications from other manufacturers, such as:
1. Toshiba TC58NVG0S3HTA00
2. Samsung K9F1G08U0D
3. Hynix H27U1G8F2BTR
These chips generally share similar architecture, storage capacity, and interface types and are used in comparable applications. However, always verify specific technical details to ensure full compatibility.

Features

The MT29F1G08ABAEAWP:E is a NAND Flash memory chip manufactured by Micron Technology. Key features of this chip include:
1. Capacity: 1 Gb (Gigabit) storage capacity.
2. Architecture: Single-level cell (SLC) NAND architecture for higher reliability and speed.
3. Package Type: Comes in a 48-pin TSOP (Thin Small Outline Package).
4. Interface: Operates on an 8-bit I/O interface.
5. Performance: Provides fast read and write operations suitable for embedded applications.
6. Endurance and Reliability: High endurance with typical endurance cycles of around 100,000 program/erase cycles, ensuring longevity for applications requiring frequent data rewrites.
7. Voltage: Operates at a voltage range of 2.7V to 3.6V.
8. Operating Temperature: Suitable for industrial temperature ranges, often between -40°C to 85°C.
9. ECC Requirement: Requires error correction code (ECC) for ensuring data integrity.
10. Applications: Ideal for use in consumer electronics, industrial applications, and other systems requiring reliable data storage solutions.
These features make it a preferred choice for applications needing robust and dependable memory performance.

Pinout

The MT29F1G08ABAEAWP:E is a NAND Flash memory chip manufactured by Micron Technology. It typically comes in a standard 48-pin TSOP (Thin Small Outline Package) form factor. The primary function of this chip is to provide non-volatile storage, which means it retains data even when the power is turned off.
Key features and functions include:
- Capacity: 1 Gigabit (Gb)
- Interface: SLC (Single-Level Cell) NAND Flash
- Page Size: 2,112 bytes (2,048 bytes + 64 bytes spare)
- Block Size: 64 pages per block
- Read, Program, and Erase Operations: Supports standard NAND operations for data storage and retrieval.
The pins are used for various functions, including data input/output, command inputs, address inputs, chip enable, read enable, write enable, and power supply connections. Among these, a few important pins are:
- CLE (Command Latch Enable)
- ALE (Address Latch Enable)
- CE# (Chip Enable)
- WE# (Write Enable)
- RE# (Read Enable)
For complete and specific details, refer to the datasheet provided by Micron.

Manufacturer

The MT29F1G08ABAEAWP:E is manufactured by Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of semiconductor devices, primarily focusing on memory and storage products. They are one of the leading companies in the semiconductor industry, known for manufacturing dynamic random-access memory (DRAM), NAND flash memory, and other memory-related technologies. Micron's products are used in a wide range of applications, including consumer electronics, mobile devices, data centers, automotive, and industrial markets.

Application

The MT29F1G08ABAEAWP:E is a NAND flash memory chip commonly used in applications requiring non-volatile storage. Its typical application areas include:
1. Consumer Electronics: Used in devices like MP3 players, digital cameras, and set-top boxes for storing firmware and media files.
2. Mobile Devices: Provides storage for smartphones and tablets.
3. Computing: Utilized in solid-state drives (SSDs) and as storage solutions for laptops and desktops.
4. Industrial Applications: Implemented in embedded systems and industrial machinery for data logging and firmware storage.
5. Networking: Used in routers and switches for configuration data and system firmware storage.
These applications benefit from its reliability, endurance, and compact storage capabilities.

Package

The MT29F1G08ABAEAWP:E is a NAND Flash memory chip from Micron Technology, featuring a TSOP (Thin Small Outline Package). This type of packaging is typically used to save space while providing a reliable solution for mounting on printed circuit boards (PCBs).

Frequently Asked Questions


Q: What is the memory capacity and organization of this NAND Flash?
A: It is a 1Gbit Non-Volatile FLASH, organized as 128M x 8 bits, ideal for code or data storage.


Q: What is the supply voltage requirement for this component?
A: It operates with a standard 2.7V to 3.6V supply, compatible with common 3.3V logic systems.


Q: Is this a parallel or serial interface NAND Flash?
A: It uses a Parallel memory interface, requiring multiple address/data lines for faster read/write operations.


Q: What is the operating temperature range for this device?
A: The operating temperature range is 0°C to 70°C (TA), suitable for commercial-grade applications.


Q: What package type does this NAND Flash use?
A: It comes in a 48-TFSOP (0.724", 18.40mm Width) surface-mount package, specifically a 48-TSOP I.


Q: Why is the Part Status listed as "Last Time Buy"?
A: This indicates the component is nearing end-of-life; you may consider stocking for final production or evaluating potential replacements.


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