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MT29F1G08ABBDAH4-IT:D
+StücklisteIC FLASH 1GBIT PARALLEL 63VFBGA
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HerstellerMicron Technology Inc.
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Herstellerteil #MT29F1G08ABBDAH4-IT:D
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Auf Lager7241
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Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | MT29F1G08 |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Packaging | Bulk |
Übersicht
Description
- Interface and organization: NAND flash with a typical 2 KB page size and a spare area, organized into blocks/planes for wear leveling and multi‑plane operation.
- Technology: Multi‑Level Cell (MLC) NAND; requires a flash controller with ECC and a Wear Leveling/Bad Block management (FTL) layer.
- Electricals: Standard NAND voltages (Vcc ~3.3 V); designed for conventional flash interfaces.
- Temperature: Industrial temperature variant (IT) indicating wide operating/industrial temperature range (-40°C to +85°C).
- Usage: Intended for embedded storage, SSDs, USB drives, and other nonvolatile storage applications; used with a NAND controller and proper software/firmware for ECC, bad block handling, and garbage collection.
- Documentation: For exact timing, endurance, page/block geometry, and package details, consult the MT29F1G08ABBDAH4‑IT:D datasheet from Micron.
Note: specs can vary by revision; verify with the official datasheet.
Equivalent
- Samsung K9F1G08U0D/U0M
- Spansion S34ML01G2
- Winbond W29N01G
Note: cross-compatibility depends on timing, voltage, and packaging (IT:D). Verify ONFI specs and the exact package/temperature grade before substitution.
Features
- Density: 1 Gb (128 MB) NAND Flash
- Interface: Parallel, 8-bit data bus (x8); 3.3V supply
- Memory tech: Multi-Level Cell (MLC)
- Page/Spare: 2 KB main page with ~64 B spare area
- Block: Typically 128-page blocks
- Endurance/Retention: ~100k P/E cycles; data retention years (typical)
- Operating range: Industrial temperature: -40°C to 85°C
- Voltage: Vcc ≈ 3.3V (2.7–3.6V)
- Reliability features: Automatic bad block management, wear leveling
- ECC/Protection: Built-in/required ECC support for reliable operation
- Packaging/Grade: Industrial grade (-IT:D) in appropriate BGA/package for embedded use
Note: Exact page/BBM specifics can vary by die revision; refer to the datasheet for precise timing, page, and block parameters.
Pinout
- Function: Micron MT29F1G08ABBDAH4-IT:D is a 1 Gbit NAND flash memory (128 M x 8) with an asynchronous 8-bit data bus used for storage, accessed via the standard NAND flash command interface (CLE/ALE/CE#, WE#, RE#/R/B, etc.).
Manufacturer
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND Flash, SSDs) and related products.
Application
- Embedded non-volatile storage for mobile devices and consumer electronics (phones, tablets, cameras, camcorders)
- Firmware storage and data logging in embedded systems
- Raw NAND used in storage solutions via controllers (SSDs, USB drives, SD/eMMC modules)
- Automotive and industrial equipment requiring rugged, wide-temperature memory
- Digital imaging and multimedia devices and set-top boxes using NAND-based storage
Package
Frequently Asked Questions
Q: What is the memory density and organization of this NAND Flash?
A: It has a 1Gbit density with a 128M x 8 bit organization, ideal for high-density parallel data storage.
Q: Does this component support industrial temperature ranges?
A: Yes, it operates from -40°C to 85°C (TA), making it suitable for harsh environment applications.
Q: What voltage supply does the MT29F1G08ABBDAH4-IT require?
A: It requires a low-voltage supply of 1.7V to 1.95V, designed for power-sensitive embedded systems.
Q: Is this memory device RoHS compliant and lead-free?
A: RoHS status is not verified; please confirm with your supplier for specific compliance requirements.
Q: What is the memory interface type of this part?
A: It uses a parallel memory interface, facilitating high-speed data transfers in legacy controller designs.
Q: Can this flash memory replace older 3.3V NAND devices?
A: No, it operates at 1.8V nominal (1.7V-1.95V), so level shifters may be needed for 3.3V systems.
Q: What package form factor does this component come in?
A: It comes in a 63-VFBGA (9x11mm) surface-mount package, ideal for compact PCB layouts.
Q: Is this part still in active production?
A: No, the part status is "Obsolete". Check for alternative or end-of-life inventory from distributors.
