MT29F8G08ABABAWP:B

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MT29F8G08ABABAWP:B

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IC FLASH 8GBIT PARALLEL 48TSOP I

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT29F8G08ABABAWP:B

  • Auf Lager2891

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7*24 Stunden-Servicegarantie

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number MT29F8G08
Digi Key Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 8Gbit
Memory Organization 1G x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Übersicht

Description

The MT29F8G08ABABAWP:B is a specific type of NAND Flash memory chip manufactured by Micron Technology. It belongs to the company's portfolio of non-volatile memory devices, which are used for data storage in a variety of electronic applications. This particular model features an 8-gigabit capacity organized in a 1-bit-per-cell architecture, making it suitable for applications that require reliable and high-density storage solutions.
The chip is designed with a standard interface for easy integration into systems and supports features such as error correction code (ECC), wear leveling, and bad block management to ensure data integrity and longevity. It typically operates at a low voltage, making it an energy-efficient choice for embedded systems, consumer electronics, and industrial applications. Additionally, the package type, "AWP," refers to the specific physical encapsulation and pin configuration, which impacts how it is mounted onto circuit boards.
Overall, the MT29F8G08ABABAWP:B is a versatile NAND Flash memory option for various storage needs, balancing performance, reliability, and cost-effectiveness.

Equivalent

The MT29F8G08ABABAWP:B is an 8Gb NAND Flash memory chip from Micron. Equivalent products can be found from other manufacturers like Samsung, Toshiba (now Kioxia), and SK Hynix. Comparable models include Samsung's K9GAG08U0E, Toshiba's TC58NVG5D2ETA00, and SK Hynix's H27UBG8T2ATR. It's important to verify the specific requirements like interface, package type, and voltage to ensure full compatibility.

Features

The MT29F8G08ABABAWP:B is a NAND Flash memory device from Micron. It features an 8 Gb storage capacity and utilizes a single-level cell (SLC) architecture, which provides higher endurance and reliability compared to multi-level cell (MLC) or triple-level cell (TLC) NAND. This device operates on a 3.3V power supply, making it suitable for various embedded applications that require low power consumption.
It supports asynchronous interface for data communication and is organized in a x8 configuration, allowing 8 bits to be accessed in parallel. The device includes features like wear leveling and bad block management to enhance its durability and lifespan. It also has a small form factor, which is beneficial for space-constrained applications.
The MT29F8G08ABABAWP:B is commonly used in industrial, automotive, and consumer electronics, where robust performance and reliability are critical. Its operating temperature range and enhanced endurance make it ideal for challenging environments.

Pinout

The MT29F8G08ABABAWP:B is a NAND flash memory chip manufactured by Micron Technology. It typically comes in a 48-pin TSOP (Thin Small Outline Package). Here’s a concise overview of its pin functions:
1. Power Supply Pins:
- VCC: Power supply for the core.
- VSS: Ground.
2. Control Pins:
- CLE (Command Latch Enable): Latches command data.
- ALE (Address Latch Enable): Latches address data.
- CE# (Chip Enable): Activates the device.
- RE# (Read Enable): Controls data output.
- WE# (Write Enable): Controls data input.
3. Data Pins:
- I/O0–I/O7: Data input/output pins.
4. Write Protect Pin:
- WP# (Write Protect): Protects against unwanted writes.
5. Ready/Busy Pin:
- R/B#: Indicates the status of the device.
This configuration is typical for NAND flash memory chips, designed to offer efficient data storage in various electronic devices. For detailed specifications, refer to the device’s datasheet.

Manufacturer

The MT29F8G08ABABAWP:B is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and manufactures a wide range of advanced memory technologies, including DRAM, NAND, NOR, and 3D XPoint, which are used in various applications such as computers, smartphones, servers, and automotive systems. Micron is known for its innovation and contributions to advancing semiconductor technology, making it a crucial player in the electronics and computing industries.

Application

The MT29F8G08ABABAWP:B is an 8 Gb NAND Flash memory chip used in various applications. It is commonly used in consumer electronics like smartphones and tablets for data storage. In industrial settings, it can be utilized in embedded systems for data logging and firmware updates. Additionally, it finds application in solid-state drives (SSDs) for faster data access and in automotive electronics, providing reliable storage for navigation and infotainment systems. Its non-volatile nature makes it suitable for applications requiring data retention without power.

Package

The MT29F8G08ABABAWP:B is a NAND Flash memory chip with a TSOP (Thin Small Outline Package) type. This package is compact and suitable for surface-mount technology, making it ideal for various electronic devices requiring memory storage.

Frequently Asked Questions


Q: Is the MT29F8G08ABABAWP:B an SLC or MLC NAND Flash?
A: Based on the specifications, it is a FLASH - NAND type device. While the exact cell level is not specified, the 8Gbit capacity and 1G x 8 organization are typical for SLC NAND.


Q: Can this memory operate at both 2.7V and 3.6V simultaneously?
A: No. The voltage supply range is 2.7V to 3.6V, meaning the device is guaranteed to function correctly at any stable voltage within this continuous range.


Q: What is the operating temperature range for this component?
A: The operating temperature is from 0°C to 70°C (TA), which is a standard commercial temperature range.


Q: Is this part still recommended for new designs?
A: No. The part status is listed as "Obsolete". It is not recommended for new designs and is suitable only for legacy system repairs or existing production runs.


Q: How many data I/O pins does the parallel interface have?
A: It uses an 8-bit parallel memory interface, which corresponds to 8 data I/O pins (DQ0-DQ7).


Q: What is the physical package size for this NAND Flash?
A: It comes in a 48-TFSOP package with a width of 18.40mm, specifically the 48-TSOP I (Thin Small Outline Package) form factor.


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