Abbildungen dienen nur als Referenz
MT40A256M16LY-075:F
+StücklisteIC DRAM 4GBIT PAR 96FBGA
-
HerstellerMicron Technology Inc.
-
Herstellerteil #MT40A256M16LY-075:F
-
Auf Lager9701
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (7.5x13.5) |
| Base Product Number | MT40A256M16 |
| Clock Frequency | 1.333 GHz |
| Access Time | 19 ns |
Übersicht
Description
Key characteristics include a data rate of 2400 MT/s (megatransfers per second) and a CAS latency of 17, which balances speed and latency for effective data access. The "-075" in the nomenclature typically denotes the clock speed or related performance specifications, while the "F" could refer to a specific revision or feature set from Micron.
As a DDR4 module, it operates at a lower voltage compared to its predecessors, improving energy efficiency and reducing heat output. This makes it suitable for a variety of applications, from personal computers to enterprise servers, where reliability and performance are crucial. Additionally, Micron's reputation for quality and durability assures users of consistent operation and longevity.
Equivalent
1. Samsung's K4A4G165WE-BCRC
2. Hynix's H5AN4G8NAFR-UHC
3. Kingston's D2516EC4BXGJD
These equivalents match in memory size, speed, and form factor, making them suitable alternatives for similar applications. Always verify specific requirements such as voltage and timing to ensure compatibility.
Features
This DRAM module supports various features such as programmable CAS latency, burst length, and burst type, which enhances flexibility and performance. It is designed for high-performance computing applications including servers, desktops, and networking devices. The module also includes error-correcting code (ECC) capabilities to ensure data integrity and reliability. Overall, the MT40A256M16LY-075:F is suitable for applications requiring high-speed and reliable memory solutions.
Pinout
The key functions and pin assignments include:
1. Power Supply and Ground: VDD, VDDQ, and VSS pins supply power to the DRAM, with VDD typically at 1.2V.
2. Address and Control: Pins such as Address (A0-A15), Row Address Strobe (RAS#), Column Address Strobe (CAS#), and Write Enable (WE#) are used to control data flow and address the memory locations.
3. Data I/O: DQ pins are used for data input/output.
4. Data Strobe: DQS and DQS# are used for data strobe signals.
5. Clock: CK and CK# are differential clock inputs for synchronizing operations.
6. Command Inputs: Control inputs like Command/Address (CA) are used for command and address functions.
This concise overview outlines the essential pin functions and counts for the MT40A256M16LY-075:F DRAM module. For detailed specifications, refer to the manufacturer's datasheet.