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MT40A512M16TB-062E IT:R
+StücklisteDRAM DDR4 8Gbit 16 96/144 TFBGA 1 IT
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HerstellerMicron
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Herstellerteil #MT40A512M16TB-062E IT:R
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Auf Lager9462
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | Tray |
| Standard Pack Qty | 1020 |
Übersicht
Description
The module is designed to operate under industrial temperature ranges, ensuring reliability in more demanding environments. It's typically used in applications requiring consistent performance and high data throughput, such as servers, workstations, and high-performance computing systems. The "062E IT:R" denotes specific manufacturer information regarding timing and production codes.
Overall, the MT40A512M16TB-062E IT:R is a robust memory solution offering efficient data processing capabilities, making it ideal for applications needing dependable and fast memory storage solutions.
Equivalent
1. Samsung: K4A8G165WB-BCRC
2. SK Hynix: H5AN8G8NAFR-UHC
3. Kingston: D4516G6AMG5A
These equivalents generally offer similar specifications such as storage capacity, speed, and voltage, though minor differences may exist in performance and power efficiency. Always check datasheets for precise compatibility.
Features
1. Density and Organization: It has a density of 8 Gb (gigabits) and is organized as 512M x 16, which refers to its configuration of memory cells.
2. Speed and Performance: Operates at speeds up to 3200 MT/s (megatransfers per second), providing high-performance memory operations.
3. Voltage: Uses a standard operating voltage of 1.2V, contributing to power efficiency.
4. Temperature Range: Designed for industrial temperature range applications, typically between -40°C to +95°C.
5. Package: Available in a FBGA (Fine-pitch Ball Grid Array) package, which is compact and suitable for a variety of applications.
6. ECC Support: Features error-correction capabilities, enhancing data integrity and reliability.
7. Bank Architecture: Incorporates a bank architecture with several internal banks for improved access times and efficiency.
This component is suitable for high-performance computing applications where speed, reliability, and power efficiency are critical.
Pinout
Key functions of this DDR4 SDRAM include:
1. High-Speed Data Transfer: Supports high data rates and increased bandwidth compared to previous generations of DDR SDRAM.
2. Low Power Consumption: Features lower operating voltage to improve energy efficiency.
3. Enhanced Reliability: Includes features like on-die termination and data bus inversion to improve signal integrity and reduce power consumption.
4. Error Correction: Supports ECC (Error Correction Code) for higher data integrity in critical applications.
The MT40A512M16TB-062E IT:R is commonly used in computing and networking applications that require high-speed memory performance.
Manufacturer
Application
1. Data Centers: Provides reliable memory for servers and storage systems.
2. Enterprise Computing: Supports demanding tasks for business applications and databases.
3. Networking Equipment: Enhances performance in routers, switches, and other network devices.
4. Telecommunications: Used in equipment requiring rapid data processing.
5. Embedded Systems: Suitable for industrial PCs and IoT devices due to its stability and speed.
6. Consumer Electronics: Powers high-performance laptops, desktops, and gaming systems.
The module's high speed and efficiency make it ideal for environments requiring fast data access and processing.