MT40A512M8HX-093E:A

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MT40A512M8HX-093E:A

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IC DRAM 4GBIT PAR 78FBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT40A512M8HX-093E:A

  • Auf Lager4495

365 Tage Qualitätsgarantie

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number MT40A512M8
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Clock Frequency 1.066 GHz
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 78-TFBGA
Supplier Device Package 78-FBGA (9x11.5)
Packaging Tray

Übersicht

Description

MT40A512M8HX-093E:A is a Micron DDR3 SDRAM device. Key points:
- Capacity/organization: 512 megabits, organized as 64M x 8 (8-bit wide).
- Type: Synchronous, unbuffered DDR3 DRAM with multi-bank architecture (typically used as a single DRAM chip on modules or boards).
- Speed/voltage: The -093E:A suffix encodes speed grade/temperature variant; exact data rate and voltage depend on revision. DDR3 typically runs at 1.5 V (or 1.35 V for DDR3L variants).
- Package: Commonly a small-ball FBGA package used on memory modules or memory-needed devices.
- Applications: System memory in PCs/servers, embedded systems, and other equipment requiring DRAM.
For precise electrical specs (tRCD, tRP, tRAS, tRC, max frequency, voltage, thermal characteristics), refer to the official MT40A512M8HX-093E:A datasheet from Micron.

Equivalent

MT40A512M8HX-093E:A is Micron DDR2 SDRAM, 4 Gbit total (512 Mbit × 8), 1.8 V. Equivalents exist from other vendors with the same density/width and speed grade. For exact cross‑references (Hynix/Samsung), please provide the speed grade and package (e.g., PC2-3200/PC2-4200, FBGA). I can then list precise alternative part numbers.

Features

MT40A512M8HX-093E:A is a Micron DDR3/DDR3L SDRAM device. Key features:
- Density/Org: 4 Gb total (512M x 8)
- Interface: DDR3/DDR3L SDRAM, synchronous with DQS/DQ; 8-bank structure
- Data rate: up to 1600 MT/s (DDR3-1600) typical
- Data width: x8 bus
- Voltage: DDR3L (1.35 V) with 1.5 V tolerance (low-voltage variant)
- Timing/Features: JEDEC-compliant, auto refresh, ZQ calibration, burst lengths 4/8
- Temperature: industrial range options (commonly -40°C to 85°C)
- Applications: high-density memory in modules, mobile/embedded systems requiring low power
Note: Exact speed grade, voltage, and temperature range depend on the specific bin/ordering; consult the datasheet for the precise parameters of your lot.

Pinout

- Pin count: 60-ball BGA (typical package for MT40A512M8HX-093E:A)
- Function: 512 Mb, x8 wide synchronous DRAM (DDR-type) with 8 data I/O lines (DQ0–DQ7), DQS for data strobe, and standard address/command lines plus bank and control signals (RAS#, CAS#, WE#, CS#, CKE) for memory operations.

Manufacturer

Manufacturer: Micron Technology, Inc.
What kind of company: An American multinational semiconductor company based in Boise, Idaho. It is one of the world’s leading memory manufacturers, producing DRAM, NAND flash, and related storage products for consumer, enterprise, and automotive markets.

Application

MT40A512M8HX-093E:A is a Micron 512 Mb x8 DRAM device used as system memory. Common application areas include:
- Desktop and notebook memory (DIMMs/SODIMMs)
- Servers and workstation memory modules
- Networking and telecom equipment
- Embedded systems and industrial automation
- Consumer electronics (set-top boxes, game consoles)
- Automotive infotainment and dashboard subsystems
Used as a building block for main memory in various electronic platforms.

Package

FBGA package, 96-ball (96-ball Fine-perrch Ball Grid Array).

Frequently Asked Questions


Q: What is the memory density and organization of the MT40A512M8HX-093E:A?
A: It is a 4Gbit DDR4 SDRAM organized as 512M words x 8 bits per bank, suitable for high-density memory applications.


Q: What is the maximum clock frequency supported by this component?
A: The device operates at a clock frequency of 1.066 GHz, enabling high-speed data transfer rates for DDR4 interfaces.


Q: What is the voltage supply range for this DDR4 memory?
A: It requires a supply voltage between 1.14V and 1.26V, compliant with standard DDR4 power specifications.


Q: Can this memory operate in high-temperature environments?
A: Yes, the operating temperature range is 0°C to 95°C (TC), making it suitable for industrial or high-thermal-load systems.


Q: What package and mounting type does this part use?
A: It is housed in a 78-TFBGA package (9x11.5mm) with surface mount technology, ideal for compact PCB designs.


Q: Is this part currently available for new designs?
A: No, the part status is marked as "Obsolete," meaning it is not recommended for new designs; consider checking for alternative DDR4 options.


Q: What memory interface does this DRAM use?
A: It uses a parallel memory interface, standard for SDRAM - DDR4 communication with the memory controller.


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