MT41K1G8SN-125:A

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MT41K1G8SN-125:A

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ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

IC DRAM 8GBIT PARALLEL 78FBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT41K1G8SN-125:A

  • Auf Lager3336

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number MT41K1G8
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 8Gbit
Memory Organization 1G x 8
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 78-TFBGA
Supplier Device Package 78-FBGA (9x13.2)
Packaging Tray
Access Time 13.75 ns

Übersicht

Description

The MT41K1G8SN-125:A is a model of dynamic random-access memory (DRAM) manufactured by Micron Technology. It belongs to the DDR3 SDRAM family, which stands for Double Data Rate 3 Synchronous Dynamic Random-Access Memory. This type of memory is designed to provide high data transfer rates and improved performance over its predecessors, DDR2 and DDR.
With a configuration of 1Gb (gigabit), the MT41K1G8SN-125:A is organized in a x8 data bus format, meaning it can handle 8 bits of data simultaneously. The -125 in the part number typically indicates a speed grade with a clock cycle time of 1.25 nanoseconds, corresponding to an 800 MHz clock speed (1600 MT/s data rate).
This DRAM is suitable for a variety of applications, including computing, consumer electronics, and networking, offering reliable performance for tasks requiring efficient memory access. It features a low-voltage operation, improving energy efficiency and thermal management in systems where it is deployed.

Equivalent

The MT41K1G8SN-125:A chip is a DDR3L SDRAM, 8Gb (1G x 8) memory chip. Equivalent products include:
1. Samsung K4B1G0846F
2. Hynix H5TQ1G63EFR
3. Nanya NT5CC128M8JJR
4. Elpida EDJ8116EBSE
These are similar in terms of DDR3L technology, density, and speed, but always verify specific compatibility with your application.

Features

The MT41K1G8SN-125:A is a DRAM component belonging to the DDR3 SDRAM family. Key features include:
1. Density and Organization: It is a 1Gb DRAM chip, arranged in a x8 configuration.
2. Speed: The component supports a data rate of up to 1600 MT/s (megatransfers per second).
3. Voltage: Operates at a standard DDR3 voltage of 1.5V.
4. Package: Typically comes in a FBGA (Fine-Pitch Ball Grid Array) package, which is compact and facilitates efficient connections.
5. Temperature Range: Designed for standard operating temperature ranges, suitable for various environments.
6. Applications: Used in applications requiring fast and efficient memory, such as computers, servers, consumer electronics, and networking devices.
7. Reliability: Incorporates features for robust performance and reliability, essential for high-demand systems.
These features make the MT41K1G8SN-125:A a versatile choice for systems needing reliable and high-speed memory solutions.

Pinout

The MT41K1G8SN-125:A is a DRAM chip, specifically a DDR3L SDRAM from Micron Technology. This chip typically comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. It is an 8-bit wide memory module, with each chip typically organized as 1G x 8 bits.
Key functions and features of the MT41K1G8SN-125:A include:
1. Data Rate and Performance: It supports a data rate of up to 1600 MT/s (megatransfers per second) and operates at a specified voltage of 1.35V (DDR3L).
2. Memory Organization: The memory is organized as 1G x 8 bits, providing a total of 8Gb (gigabits) capacity per chip.
3. Low Power Consumption: As a low voltage DDR3L SDRAM, it is designed to consume less power compared to standard DDR3 modules.
4. Applications: It is commonly used in computing applications that require efficient memory performance, such as laptops, desktops, and other electronic devices requiring robust memory solutions.
For detailed pin functions and layouts, refer to the datasheet or technical documentation provided by Micron.

Manufacturer

The MT41K1G8SN-125:A is manufactured by Micron Technology, Inc. Micron is a leading American company specializing in the production of semiconductor devices, particularly dynamic random-access memory (DRAM), NAND flash memory, and other types of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest memory manufacturers in the world. The company plays a crucial role in the technology industry by supplying memory products used in a wide range of applications, including computers, mobile devices, servers, automotive, and industrial systems. Micron's innovations in memory technology contribute significantly to advancements in data processing and storage, impacting sectors such as computing, consumer electronics, and telecommunications.

Application

The MT41K1G8SN-125:A is a DRAM module commonly used in various electronic applications due to its high bandwidth and low power consumption. Key application areas include:
1. Computing Devices: Utilized in desktops, laptops, and servers to enhance processing speed and memory capacity.
2. Mobile Devices: Used in smartphones and tablets for efficient multitasking and improved performance.
3. Networking Equipment: Applied in routers and switches to manage data flow efficiently.
4. Consumer Electronics: Found in gaming consoles and smart TVs for better graphics and faster response times.
5. Embedded Systems: Used in industrial devices and automotive systems for reliable and robust memory solutions.
These applications benefit from the DRAM's high-speed data processing and energy efficiency.

Package

The MT41K1G8SN-125:A is a DRAM chip packaged in a 78-ball FBGA (Fine-Pitch Ball Grid Array) format. This type of packaging provides a compact and efficient layout for high-density and high-performance memory applications.

Frequently Asked Questions


Q: What is the memory density and organization of this DRAM?
A: It has 8Gbit density organized as 1G x 8 bits, making it suitable for high-density parallel memory interfaces.


Q: What is the maximum clock frequency supported?
A: It supports a clock frequency of 800 MHz, enabling high-speed data transfer for DDR3L applications.


Q: What voltage range does this DDR3L component require?
A: It operates within a voltage supply range of 1.283V to 1.45V, compliant with low-voltage DDR3L standards.


Q: What is the access time and operating temperature range?
A: The access time is 13.75 ns, with a temperature range of 0°C to 95°C (TC), suitable for commercial applications.


Q: Is this component surface mount and what package does it use?
A: Yes, it is surface mount in a 78-TFBGA package, with a supplier device package of 78-FBGA (9x13.2mm).


Q: What is the memory format and interface type?
A: It is volatile DRAM (DDR3L) with a parallel memory interface, ensuring high-bandwidth data transfer.


Q: Can this part be used in new designs if it is obsolete?
A: Its part status is obsolete; it is recommended for legacy system repairs or existing BOMs, not for new designs.


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