MT41K256M16HA-125:E

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MT41K256M16HA-125:E

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IC DRAM 4GBIT PARALLEL 96FBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT41K256M16HA-125:E

  • Auf Lager2834

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number MT41K256M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (9x14)
Packaging Tray
Access Time 13.75 ns

Übersicht

Description

The MT41K256M16HA-125:E is a type of DRAM component from Micron Technology. Specifically, it is a DDR3L (Double Data Rate 3 Low Voltage) SDRAM with a capacity of 4 Gigabits, organized as 256 Megabits x 16 bits. Known for its low power consumption due to its 1.35V operation, it is also backward compatible with 1.5V systems. The "125" typically represents the speed grade, implying a clock cycle time of 1.25 nanoseconds, equating to a data rate of 1600 MT/s (Megatransfers per second), which is suitable for applications requiring high-speed data processing.
The "E" revision indicates a specific iteration with possibly improved features or optimizations over previous models. These components are commonly used in laptops, desktops, and other computing systems requiring efficient memory performance. The chip is designed for high reliability and efficiency, supporting features like on-die termination (ODT), dynamic on-die termination, and self-refresh for improved performance and power savings.

Equivalent

The MT41K256M16HA-125:E is a 4Gb DDR3L SDRAM memory chip from Micron. Equivalent products include:
1. Samsung's K4B4G1646E DDR3L SDRAM.
2. Hynix's H5TC4G63AFR DDR3L SDRAM.
3. Nanya's NT5CB256M16DP-DI DDR3L SDRAM.
4. Kingston's ACR16D3LS1KBG/4G DDR3L SDRAM.
These chips offer similar performance and specifications, making them suitable alternatives for applications requiring 4Gb DDR3L memory.

Features

The MT41K256M16HA-125:E is a DDR3L SDRAM memory chip from Micron Technology. It features a 4Gb density organized as 256M x 16 bits. The chip operates at a low voltage of 1.35V, which enhances power efficiency. It supports a data rate of up to 1600 MT/s, providing high-speed data processing capabilities. The memory module uses a fly-by topology for the command/address bus, improving signal integrity and system performance. With a 64ms refresh interval for each row, it is suitable for a wide range of high-performance computing applications. Additionally, the chip includes features like on-die termination (ODT), dynamic on/off-chip termination, and ZQ calibration for optimized signal quality. It also supports various self-refresh modes and auto temperature-compensated self-refresh for enhanced reliability. These features make it ideal for use in laptops, desktops, and servers where power efficiency and high performance are crucial.

Pinout

The MT41K256M16HA-125:E is a DDR3 SDRAM chip manufactured by Micron Technology. It is organized as 16 Megabanks × 16K rows × 1K columns × 16 bits. Here is a brief overview of its pin count and primary functions:
- Pin Count: This chip is typically available in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.

- Functions:
- Data Pins (DQ): Used for data input/output operations.
- Address Pins (A0-A14): Used for addressing rows, columns, and banks within the memory.
- Bank Address Pins (BA0-BA2): Selects one of the memory banks.
- Command Pins (RAS#, CAS#, WE#): Control the read/write operations and other commands.
- Clock Pins (CK, CK#): Synchronize the operation of the memory chip.
- Control Pins (CS#, CKE, ODT): Used for selecting the chip, enabling clock, and on-die termination.
- DM Pins: Data Mask, used for masking data during write operations.
- Reset Pin (RESET#): Used to reset the memory chip.
- Power and Ground Pins (VDD, VDDQ, VSS): Supply power and ground connections for the chip's operation.
This architecture and pin configuration make the MT41K256M16HA-125:E suitable for various computing applications requiring efficient memory management.

Manufacturer

The MT41K256M16HA-125:E is manufactured by Micron Technology, Inc. Micron is a prominent American company specializing in the production of semiconductor devices, particularly dynamic random-access memory (DRAM), NAND flash memory, and other memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the leading companies in the field of memory and semiconductor technology.
Micron's products are integral to various computing, networking, and mobile applications. Their innovations support a wide range of industries, including data centers, automotive, mobile devices, and industrial applications. The company's focus is on developing advanced memory solutions that enhance performance, efficiency, and reliability, contributing significantly to the technological advancements in the global electronics market.

Application

The MT41K256M16HA-125:E is a DDR3 SDRAM chip commonly used in a variety of electronic applications. Its primary application areas include:
1. Computing: Used in servers, desktops, and laptops for efficient data processing.
2. Embedded Systems: Supports devices like industrial controllers and IoT devices.
3. Networking Equipment: Enhances performance in routers, switches, and modems.
4. Consumer Electronics: Found in smart TVs, gaming consoles, and set-top boxes.
5. Mobile Devices: Used in smartphones and tablets for improved memory performance.
These applications leverage its high-speed data transfer capabilities, low power consumption, and reliability.

Package

The MT41K256M16HA-125:E is a DRAM component from Micron's DDR3 SDRAM series. It comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. This package type is designed for compactness and efficient thermal performance, suitable for high-density memory applications.

Frequently Asked Questions


Q: What is the memory type and technology of the MT41K256M16HA-125:E?
A: It is a volatile DRAM using DDR3L SDRAM technology, optimized for low voltage (1.283V–1.45V) operation.


Q: What is the maximum clock frequency for this DDR3L device?
A: The device supports a clock frequency of 800 MHz, corresponding to DDR3L-1600 data rate (1.6 GT/s).


Q: What is the memory size and organization of this component?
A: It offers 4Gbit memory organized as 256M x 16, with a parallel interface for high bandwidth applications.


Q: What is the access time for this DDR3L chip?
A: The access time is specified as 13.75 ns, ensuring fast data retrieval under nominal conditions.


Q: Is this part still in production, and what is its lifecycle status?
A: The part status is listed as "Obsolete", so it is not recommended for new designs but may be suitable for legacy system repairs.


Q: What package and mounting type does the MT41K256M16HA-125:E use?
A: It comes in a 96-TFBGA package with surface mount, and the supplier device package is 96-FBGA (9x14).


Q: What is the operating temperature range for this DRAM?
A: It operates from 0°C to 95°C (TC), making it suitable for standard commercial temperature range applications.


Q: How is this component typically supplied—in tray or tape/reel?
A: The packaging is listed as "Tray", ideal for manual or low-volume automated assembly processes.


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