MT41K256M16TW-093:P

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MT41K256M16TW-093:P

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IC DRAM 4GBIT PAR 96FBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT41K256M16TW-093:P

  • Auf Lager6033

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Attribut Wert
Part Status Active
Base Product Number MT41K256M16
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 1.066 GHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (8x14)
Packaging Tray
Access Time 20 ns

Übersicht

Description

The MT41K256M16TW-093:P is a DRAM (Dynamic Random-Access Memory) component, specifically a DDR3L SDRAM (Double Data Rate 3 Low Voltage Synchronous Dynamic RAM) manufactured by Micron Technology. It is part of Micron's 4Gb DRAM family, designed for high-speed data transfer rates and efficient power usage.
Key features include:
1. Density and Organization: It has a density of 4Gb, organized as 256M x 16 bits, making it suitable for high-density memory applications.
2. Speed: Operates at a high clock speed, up to 933 MHz (1866 MT/s), which allows for quick data access and processing.
3. Voltage: The DDR3L operates at a lower voltage of 1.35V, providing energy efficiency compared to standard DDR3 modules.
4. Interface: Uses an 8n-prefetch architecture with a double data rate interface to transfer data on both the rising and falling edges of the clock signal.
5. Applications: Ideal for use in consumer electronics, networking, automotive, and computing devices requiring high performance and low power consumption.
Overall, the MT41K256M16TW-093:P balances speed, efficiency, and high density, making it a versatile choice for modern memory applications.

Equivalent

The MT41K256M16TW-093:P is a DRAM chip from Micron's DDR3L series. Equivalent products typically include other DDR3L DRAM chips with similar specifications from manufacturers like Samsung, Hynix, or Kingston. For example, Samsung's K4B4G1646E or Hynix's H5TQ4G63AFR may serve as alternatives, assuming they match in voltage, speed, and capacity requirements. Always verify the exact specifications and compatibility for your particular application.

Features

The MT41K256M16TW-093:P is a DRAM chip from Micron, part of their DDR3 SDRAM lineup. Key features include:
1. Capacity: 4Gb (Gigabit) per chip, organized as 256M x 16.
2. Speed: Operates at data rates of up to 1866 MT/s (Megatransfers per second).
3. Voltage: Utilizes a 1.35V low-voltage power supply for improved energy efficiency.
4. Package: Comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package for compact and reliable performance.
5. Temperature Range: Supports an extended temperature range making it suitable for various applications.
6. Reliability: Features error correction and detection mechanisms to enhance data integrity.
7. Compatibility: Backward compatible with 1.5V DDR3, providing flexibility in system designs.
8. Power Saving: Includes features like low-power auto self-refresh and partial array self-refresh for reduced power consumption.
This chip is used in applications requiring high-speed and reliable memory solutions, such as computing devices, networking equipment, and various consumer electronics.

Pinout

The MT41K256M16TW-093:P is a DRAM module from Micron's DDR3L SDRAM family. It features a 16-bit data bus and is organized as a 256 Meg x 16. The "256M16" indicates its organization and part of its identification as a 4Gb (gigabit) DRAM.
In terms of pin count, this DRAM module comes in a 96-ball FBGA (Fine Ball Grid Array) package. Each pin or ball in this configuration serves a specific function crucial for the operation of the memory module. These functions typically include:
- Power and Ground pins: VDD, VSS, etc.
- Data pins: DQ (Data Input/Output)
- Address pins: Used to access specific memory locations.
- Control pins: Commands the memory operations (e.g., CLK, CKE, CS#, RAS#, CAS#, WE#).
- Data Strobe pins: Used for data latching (e.g., DQS, DQS#).
These pins work together to facilitate the memory's operations, such as reading/writing data, addressing, and synchronizing with the memory controller. For complete pin assignments and descriptions, refer to the detailed datasheet provided by Micron.

Manufacturer

The MT41K256M16TW-093:P is a memory chip manufactured by Micron Technology, Inc. Micron is a leading American company in the semiconductor industry, specializing in the production of memory and storage solutions. Their product portfolio includes dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices, which are used in a variety of applications such as computers, mobile devices, data centers, and automotive systems. Micron is well-regarded for its innovation in memory technology and plays a significant role in advancing the capabilities and performance of electronic devices globally.

Application

The MT41K256M16TW-093:P is a DRAM component used primarily in high-performance computing applications. Its applications include data centers, servers, and networking equipment, where fast memory access is crucial. It's also used in consumer electronics like laptops, desktops, and gaming systems to enhance processing speeds and multitasking capabilities. Additionally, this DRAM is found in telecommunications equipment, automotive systems, and industrial applications where reliable and efficient memory performance is essential. Its versatility and high-speed capabilities make it suitable for a wide range of advanced technological applications.

Package

The MT41K256M16TW-093:P is a DRAM component from Micron Technology. It is a 4 Gb (gigabit) DDR3 SDRAM, and the package type is FBGA (Fine-Pitch Ball Grid Array). This type of package is known for its compact size and efficient heat dissipation, suitable for high-density applications.

Frequently Asked Questions


Q: Is this DDR3L memory compatible with standard 1.5V DDR3 slots?
A: Yes, it supports dual voltage (1.283V-1.45V), but for guaranteed stability, configure your system to DDR3L 1.35V mode.


Q: What is the maximum data rate this 4Gbit SDRAM supports?
A: With a 1.066 GHz clock frequency, the effective data rate is 2133 MT/s using double data rate (DDR) transfer.


Q: What package type does the MT41K256M16TW-093:P use?
A: It comes in a 96-ball TFBGA (8x14mm) surface-mount package, ideal for compact PCB layouts.


Q: Can this memory operate in high-temperature environments?
A: Yes, the operating temperature range is 0°C to 95°C (TC), supporting extended thermal stress.


Q: What is the memory organization of this part?
A: It is organized as 256M words x 16 bits, totaling 4Gbit density per chip.


Q: Does it require a separate Vref voltage or is on-die termination included?
A: Yes, DDR3L integrates on-die termination (ODT) and dynamic Vref, simplifying signal integrity design.


Q: Is this component intended for commercial or industrial applications?
A: With a 0°C to 95°C (TC) range, it is suitable for commercial and some industrial (extended temperature) applications.


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