MT41K256M16TW-125:P

The MT41K256M16TW-125:P is a DRAM memory chip produced by Micron Technology, designed for performance and efficiency in various applications. It is a 4Gb DDR3 SDRAM component organized as 256M x 16 bits, providing a high data rate suitable for memory-intensive tasks. The "-125" suffix indicates a speed grade of 1250 MT/s (megatransfers per second), making it suitable for mid-range applications.
This memory chip operates at a voltage of 1.5V, ensuring compatibility with a wide range of devices. The "P" at the end denotes that it is a Pb-free (lead-free) component, aligning with environmental regulations. The MT41K256M16TW-125:P is commonly used in consumer electronics, networking equipment, and embedded systems due to its balance of performance and power consumption, making it a reliable choice for manufacturers looking to enhance their products' memory capabilities.

The MT41K256M16TW-125:P is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83CFR (DDR3-1600)
2. Micron MT41K256M16HA (DDR3-1600)
3. Samsung K4B4G1646D (DDR3-1600)
Check specific configurations and compatibility for your application, as variations exist in timings and voltages.

The MT41K256M16TW-125:P is a 4GB DDR3 SDRAM memory module from Micron Technology. It features a x16 configuration, with a density of 256Mx16, enabling high-performance data transfer rates. Key specifications include:
- Data Rate: Supports up to 1600 MT/s (megatransfers per second).
- Operating Voltage: 1.5V, with a low-power variant of 1.35V available.
- Package Type: FBGA (Fine Ball Grid Array) for compact design.
- CAS Latency: Typically configured with CL=11 or CL=12 options.
- Device Width: 16 bits, suitable for various applications in computing and networking.
- Temperature Range: Commercial grade (0°C to 95°C) or industrial grade (-40°C to 95°C).
- Features: Supports self-refresh, thermal protection, and is compliant with JEDEC standards.
This memory chip is ideal for high-performance computing applications, including laptops, desktops, and servers, enabling efficient multitasking and data processing.

The MT41K256M16TW-125:P is a DDR3 SDRAM memory chip with a pin count of 78. It features a x16 data width and is organized as 256M x 16 bits. The key functions of this memory module include serving as system memory in computing applications, providing high-speed data transfer rates and efficient power management. It supports various memory operations such as read, write, and refresh cycles, designed for use in laptops, desktops, and servers. The "125" in the part number indicates the speed grade, specifying that it operates at a maximum clock frequency of 1.25 ns (800 MT/s). The ":P" suffix indicates that the chip is a Pb-free (lead-free) product, complying with environmental standards.

The MT41K256M16TW-125:P is manufactured by Micron Technology, Inc. Micron is a major American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the leading producers of DRAM, NAND flash memory, and other advanced memory technologies. The company serves a wide range of markets, including computing, networking, consumer electronics, automotive, and industrial applications. Micron is known for its innovation in memory technology and plays a crucial role in advancing data storage solutions for various devices and systems.

The MT41K256M16TW-125:P is a 4Gb DDR3 SDRAM memory chip used in various applications, including:
1. Consumer Electronics: Used in smartphones, tablets, and laptops for efficient data processing and storage.
2. Networking Equipment: Supports routers, switches, and other devices requiring high-speed memory.
3. Embedded Systems: Powers automotive systems, industrial controls, and IoT devices needing reliable memory solutions.
4. Gaming Consoles: Enhances performance in gaming devices by providing fast access to data.
5. Servers and Data Centers: Supports high-performance computing applications and cloud infrastructure.
Its high bandwidth and efficiency make it suitable for these diverse areas.

The MT41K256M16TW-125:P is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) package. This type of packaging is designed for high-density memory applications and offers a compact footprint for efficient space utilization in electronic devices.