MT46V64M8CY-5B:J

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MT46V64M8CY-5B:J

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IC DRAM 512MBIT PARALLEL 60FBGA

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Attribut Wert
Part Status Active
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 15ns
Voltage - Supply 2.5V ~ 2.7V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 60-TFBGA
Supplier Device Package 60-FBGA (8x12.5)
Base Product Number MT46V64M8
Clock Frequency 200 MHz
Access Time 700 ps

Übersicht

Description

The MT46V64M8CY-5B:J is a DRAM component from Micron Technology. It is a part of the DDR SDRAM product family, designed for high-performance memory applications. The "MT46V64M8" part of the designation indicates a density of 512 Megabits organized as 64M x 8, which means it has 64 million words that are 8 bits wide. The "CY-5B:J" suffix refers to specific attributes such as speed grade, package type, and possibly minor revisions or enhancements.
This memory is used in various computing devices, offering advantages in terms of speed and efficient power consumption. It operates at a high frequency, making it suitable for tasks requiring rapid data access and processing. Applications include personal computers, servers, and embedded systems where performance and reliability are crucial. Additionally, this DRAM utilizes a 2.5V power supply, contributing to lower power consumption compared to older memory technologies. The product is designed to support a wide range of temperatures and conditions, making it versatile for different environments.

Equivalent

The MT46V64M8CY-5B:J is a DDR SDRAM chip produced by Micron Technology. Equivalent products from other manufacturers include:
1. Samsung K4H560838J-LCB3
2. Hynix HY5DU56822BT-J
3. Infineon HYB25D256160CE-5
These products offer similar specifications and functionality, such as memory density, speed, and interface, making them suitable substitutes depending on availability and specific application requirements. Always check datasheets for compatibility before replacement.

Features

The MT46V64M8CY-5B:J is a DRAM chip from Micron Technology, specifically a 512Mb DDR SDRAM component. Key features include:
1. Memory Size and Organization: It has a capacity of 512 megabits, organized as 64Mb x 8.
2. Speed and Performance: Operates at a clock speed of 200 MHz, with a data rate of DDR-400, meaning it can transfer data at 400 MT/s (megatransfers per second).
3. Latency: CAS latency options typically include CL2.5.
4. Voltage: Operates on a power supply of 2.5V.
5. Package Type: Available in a FBGA (Fine-pitch Ball Grid Array) package which allows for compact assembly and reliability.
6. Temperature Range: Generally supports standard operating temperature ranges suitable for most consumer and industrial applications.
7. Applications: Designed for use in computing and communication systems where high bandwidth and low power consumption are required.
This makes it suitable for a variety of applications including desktop computers, laptops, and embedded systems.

Pinout

The MT46V64M8CY-5B:J is a DDR SDRAM memory chip manufactured by Micron Technology. It is organized as a 64 Meg x 8 configuration. The chip is encapsulated in a 66-pin TSOP (Thin Small Outline Package), which is a standard type of packaging for DDR SDRAMs.
The primary functions of this memory chip include storing and retrieving data in computing systems, where it provides high-speed data access and is typically used in applications such as personal computers, workstations, and servers. The functions are supported by various pins that handle data input/output, address input, power supply, ground, clock signals, and control signals for read/write operations.
Key pin functions include:
- Data (DQ) pins for data input/output.
- Address pins (A0-A12) to select memory locations.
- Control pins (such as CAS, RAS, WE) for command inputs.
- Clock pins (CLK, CKE) for synchronization.
- Power supply (VDD) and ground (VSS) pins for operational power.
For detailed specifications, refer to the chip's datasheet.

Manufacturer

The MT46V64M8CY-5B:J is a DRAM chip manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a wide range of products, including DRAM, NAND flash, and NOR flash memory, which are used in computing, consumer, mobile, automotive, industrial, and networking products.
Micron is known for its innovation in memory technology and has a significant impact on various technological advancements worldwide. The company provides solutions that are integral to the functioning of numerous electronic devices, contributing to data storage, retrieval, and processing capabilities. Micron's products are critical in enabling the performance and efficiency of modern computing and electronic systems, supporting applications from personal electronics to large-scale data centers.

Application

The MT46V64M8CY-5B:J is a type of DRAM memory module often used in various applications that require reliable and high-speed memory operations. Common application areas include:
1. Computing Devices: Used in desktops, laptops, and workstations for efficient data processing and multitasking.
2. Networking Equipment: Integral in routers and switches to manage data traffic and enhance network performance.
3. Consumer Electronics: Found in devices like gaming consoles and smart TVs for improved performance and speed.
4. Embedded Systems: Utilized in industrial machines and automotive systems for real-time data processing.
These applications benefit from the module's speed, capacity, and reliability, contributing to overall system performance and efficiency.

Package

The MT46V64M8CY-5B:J is a DRAM memory module from Micron Technology. It typically comes in a TSOP (Thin Small Outline Package) type, which is one of the common packaging types for DRAM modules. TSOP packages are used due to their compact size and efficient heat dissipation, making them suitable for various electronic devices.

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