MT47H64M16NF-25E:M TR

The MT47H64M16NF-25E:M TR is a DRAM chip from Micron Technology. It belongs to the DDR2 SDRAM family, providing high-speed data transfer and low power consumption, suitable for computing and networking applications. This specific model features a 64 Meg x 16 configuration, translating to a total capacity of 1 Gigabit. It operates at a clock speed of 400 MHz with a data rate of 800 MT/s.
Key features include a CAS latency of 5 and a supply voltage of 1.8V, contributing to its efficient performance. The component is housed in a 84-ball FBGA (Fine-pitch Ball Grid Array) package, allowing for compact and reliable installation on printed circuit boards. The "TR" in the part number denotes tape and reel packaging, ideal for automated surface-mount technology (SMT) assembly.
Overall, the MT47H64M16NF-25E:M TR is designed for applications requiring fast, efficient, and reliable memory solutions, such as computers and networking devices, offering a balanced combination of speed and power efficiency.

The MT47H64M16NF-25E:M TR is a 1Gb DDR2 SDRAM chip from Micron. Equivalent products from other manufacturers may include:
1. Hynix HY5PS121621C
2. Samsung K4T1G164QF
3. Elpida EDE1104ACSE
These components have comparable specifications in terms of storage capacity, data rate, and form factor, making them suitable alternatives. Always verify specific requirements, such as timing and package, to ensure compatibility with your application.

The MT47H64M16NF-25E:M TR is a DRAM chip from Micron Technology, specifically a mobile DDR2 SDRAM. Key features include:
1. Density and Organization: It offers 1 Gb density, organized as 64M x 16.
2. Speed: Operates at a maximum clock frequency of 400 MHz with a data rate of 800 MT/s.
3. Voltage: Requires a supply voltage of 1.8V.
4. Package Type: Available in a 84-ball FBGA package.
5. Performance: It supports a CAS latency of 3, 4, 5, or 6, enhancing data retrieval times.
6. Low Power: Designed for mobile applications; features include power-saving modes like auto temperature-compensated self-refresh (ATCSR) and partial array self-refresh (PASR).
7. Compatibility: Conforms to JEDEC standards for DDR2 SDRAMs, ensuring broad compatibility in mobile and embedded applications.
This DRAM is optimized for high-speed data processing, efficient power consumption, and reliable performance in compact form factors.

The MT47H64M16NF-25E:M TR is a DDR2 SDRAM chip from Micron Technology. This specific model has a total pin count of 84. It is primarily used for memory storage applications, providing a 1 Gbit storage capacity, organized as 64 Meg x 16.
The functions of the pins are generally categorized into several groups:
1. Address Pins (A0-A13): Used for addressing the memory cells.
2. Bank Address Pins (BA0-BA2): Used to select the specific bank within the memory array.
3. Data Pins (DQ0-DQ15): Used for data input/output.
4. Data Mask Pins (DM0-DM1): Used for data masking during write operations.
5. Control Pins: Include WE#, CAS#, RAS#, and CS# used for controlling read/write operations.
6. Clock Pins (CK, CK#): Used for synchronizing the memory operations.
7. Clock Enable Pin (CKE): Used to enable or disable the clock.
8. ODT Pin: On-Die Termination control.
9. Power and Ground Pins (VDD, VSS): Supply power and provide grounding.
These pins collectively enable the chip to perform efficient and high-speed data storage and retrieval.

The MT47H64M16NF-25E:M TR is a DRAM chip manufactured by Micron Technology, Inc. Micron is a prominent American multinational corporation that specializes in the production of semiconductor devices, including dynamic random-access memory (DRAM), flash memory, and solid-state drives (SSDs). Headquartered in Boise, Idaho, Micron is one of the leading companies in the memory and storage solutions industry. The company provides a wide range of products and solutions for various applications, including personal computing, mobile devices, data centers, automotive, industrial, and networking. It is known for its innovation and advanced technology in the semiconductor sector.

The MT47H64M16NF-25E:M TR is a DRAM memory component, specifically a DDR2 SDRAM, used in various applications requiring efficient high-speed data processing and storage. Common application areas include:
1. Computing and Servers: Enhances performance for desktops, laptops, and server applications.
2. Networking Devices: Utilized in routers, switches, and other network infrastructure for data buffering and caching.
3. Consumer Electronics: Found in gaming consoles, set-top boxes, and digital TVs for better performance.
4. Industrial Equipment: Supports embedded systems in automation and control devices.
5. Telecommunication Equipment: Used in base stations and other telecom infrastructure for reliable data handling.
Overall, it's integral for any system requiring rapid and efficient data access and processing.

The MT47H64M16NF-25E:M TR is a DRAM chip typically encapsulated in a TSOP (Thin Small Outline Package) form factor. TSOP packages are compact and commonly used in memory chips to save space on printed circuit boards.