NAND512R3A2SZA6E

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NAND512R3A2SZA6E

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IC FLASH 512MBIT PAR 63VFBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #NAND512R3A2SZA6E

  • Auf Lager3657

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number NAND512
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 50ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-TFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Tray
Access Time 50 ns

Übersicht

Description

The NAND512R3A2SZA6E is a NAND flash memory chip from Micron Technology. It is part of the NAND Flash series, known for providing high-density storage solutions for various electronic devices. This specific chip offers a capacity of 512 megabits (Mb), making it suitable for use in applications requiring reliable and efficient data storage, such as mobile devices, digital cameras, and embedded systems.
Key features of the NAND512R3A2SZA6E include its small form factor, low power consumption, and high-speed data transfer rates, which enhance device performance. It employs multi-level cell (MLC) technology, allowing multiple bits of data to be stored per memory cell, optimizing storage density. The chip supports standard NAND interface protocols, ensuring compatibility with a wide range of processors and controllers.
Overall, the NAND512R3A2SZA6E represents a versatile and efficient storage solution, combining compact design with reliable performance, and is suitable for manufacturers aiming to integrate high-capacity storage in space-constrained applications.

Equivalent

The NAND512R3A2SZA6E is a NAND Flash memory chip from STMicroelectronics. Equivalent products are those with similar specifications like storage capacity, interface, and package type. Equivalent models can include parts from other manufacturers like the K9F1G08U0D from Samsung, MT29F1G08ABAEAWP from Micron, or H27U1G8F2BTR from SK Hynix. Always verify compatibility with your specific application, as exact equivalence depends on factors such as speed grades and endurance.

Features

The NAND512R3A2SZA6E is a NAND Flash memory device. It offers a storage capacity of 512 Mbits (megabits) and is organized as 64M x 8 bits. Key features include a voltage range of 2.7V to 3.6V, making it suitable for various electronic applications. It supports a standard NAND interface and features a page size of 2048 + 64 bytes, which includes 2048 bytes for data and 64 bytes for spare area. The device is designed for reliable data storage with advanced wear-leveling and error correction capabilities. Its endurance is typically rated for 100,000 program/erase cycles, ensuring long-term usability. The NAND512R3A2SZA6E is packaged in a TSOP48 form factor, which is compact and suitable for integration into various electronic systems. It is commonly used in consumer electronics, industrial applications, and embedded systems where reliable and compact data storage solutions are required.

Pinout

The NAND512R3A2SZA6E is a NAND Flash memory device manufactured by STMicroelectronics. It typically comes in a TSOP48 package, which means it has 48 pins. This device is designed for storage applications and features 512 Megabit (64 Megabyte) capacity.
Key functions and features include:
1. Data Storage: It provides non-volatile storage, retaining data without power.
2. NAND Flash Architecture: Uses NAND architecture for high-density storage applications.
3. Interface: Operates on an asynchronous interface.
4. Page Size: Typically has a page size of 2,048 bytes with additional spare bytes for error correction.
5. Erase Block: Organized into blocks (usually 64 pages per block) that can be erased and reprogrammed.
6. Endurance: Supports a limited number of program/erase cycles, typically around 100,000 cycles per block.
This device is suitable for a range of applications including embedded systems, consumer electronics, and industrial applications where reliable mass storage is essential.

Manufacturer

The NAND512R3A2SZA6E is a NAND Flash memory chip manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products for various applications. The company serves industries such as automotive, industrial, personal electronics, communications equipment, and more. STMicroelectronics is known for its innovation in areas such as microcontrollers, sensors, power management, and digital integrated circuits, making it a key player in the electronics and semiconductor industry.

Application

The NAND512R3A2SZA6E is a NAND Flash memory chip commonly used in various electronic applications due to its reliable storage capabilities. Key application areas include:
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for data storage.
2. Computing Devices: Employed in SSDs and other storage solutions for laptops and desktops.
3. Industrial Systems: Utilized in data logging and control systems requiring robust non-volatile memory.
4. Automotive Electronics: Integrated into infotainment systems and navigation units for data storage.
5. Embedded Systems: Supports firmware and application data storage in embedded devices.
These applications benefit from its high-density storage, reliability, and compact form factor.

Package

The NAND512R3A2SZA6E is a 512Mb NAND Flash memory chip by STMicroelectronics, typically available in a TSOP (Thin Small Outline Package). TSOP is a rectangular, flat package with leads on two sides, commonly used for its compactness and ease of mounting on printed circuit boards.

Frequently Asked Questions


Q: What is the memory density and organization of this NAND Flash?
A: This device offers 512Mbit capacity organized as 64M x 8 bits, suitable for data and code storage in embedded systems.


Q: What is the supply voltage range for the NAND512R3A2SZA6E?
A: The operating voltage is 1.7V to 1.95V, making it ideal for low-power, battery-operated applications.


Q: Does this component support a parallel memory interface?
A: Yes, it uses a parallel interface with a 50ns access time and 50ns write cycle time per word/page.


Q: What is the operating temperature range for this Flash memory?
A: It operates from -40°C to +85°C (TA), supporting industrial-grade environmental conditions.


Q: Is the NAND512R3A2SZA6E still in active production?
A: No, the part status is marked as Obsolete. Please verify availability with distributors before new designs.


Q: What package does this device use?
A: It is housed in a 63-TFBGA (9x11mm) package, suitable for surface mount assembly in compact PCB designs.


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