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NAND512W3A2CN6F
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Herstellerteil #NAND512W3A2CN6F
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Spezifikationen
| Attribut | Wert |
| Package / Case | TSOP-48 |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Series | NAND512-A |
| Packaging | Reel |
| Brand | STMicroelectronics |
| Product Type | NAND Flash |
| Factory Pack Quantity | 1500 |
| Subcategory | Memory & Data Storage |
| Mounting Type | SMD/SMT |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Moisture Sensitive | Yes |
| Supply Voltage - Max | 3.6 V |
| Supply Voltage - Min | 2.7 V |
| Memory Size | 512 Mbit |
| Interface Type | Parallel |
| Organization | 64 M x 8 |
| Active Read Current - Max | 20 mA |
| Current - Supply (Max) | 20 mA |
| Product | NAND Flash |
| Timing Type | Asynchronous |
| Data Bus Width | 8 bit |
| Architecture | Multiplane |
| Memory Type | NAND |
| Speed | 50 ns |
Übersicht
Description
The NAND512W3A2CN6F is a 512Mb (64MB) NAND flash memory chip produced by Micron Technology. This device is part of the NAND family of memory solutions, designed for applications requiring high-density non-volatile storage. It features a page size of 2KB and supports various interface protocols, making it suitable for a range of embedded systems, consumer electronics, and industrial applications.
Key characteristics include fast read and write speeds, low power consumption, and a robust architecture that provides increased reliability. It employs a multi-level cell (MLC) technology, enabling it to store more data per cell than single-level cell (SLC) counterparts.
The NAND512W3A2CN6F is utilized in applications such as smartphones, tablets, automotive systems, and data storage solutions, where performance and endurance are critical. Overall, this memory solution offers versatility and efficiency for modern digital storage needs.
Key characteristics include fast read and write speeds, low power consumption, and a robust architecture that provides increased reliability. It employs a multi-level cell (MLC) technology, enabling it to store more data per cell than single-level cell (SLC) counterparts.
The NAND512W3A2CN6F is utilized in applications such as smartphones, tablets, automotive systems, and data storage solutions, where performance and endurance are critical. Overall, this memory solution offers versatility and efficiency for modern digital storage needs.
Equivalent
The NAND512W3A2CN6F chip is a 512Mb NAND flash memory device. Equivalent products typically include other 512Mb NAND chips from various manufacturers, such as Micron MT29F512G08, Samsung K9GAG08U0M, and Hynix H27UCG8T2BTR. Compatibility may vary, so it's essential to check specifications for pinout, voltage, and timing requirements to ensure proper functionality.
Features
The NAND512W3A2CN6F is a 512Mb (64MB) NAND flash memory device featuring the following key characteristics:
1. Architecture: It utilizes a 2-bit per cell Multi-Level Cell (MLC) technology for efficient data storage.
2. Interface: Supports ONFI (Open NAND Flash Interface) with a standard interface for easy compatibility.
3. Organization: The device is organized as 16 pages of 32KB each, with 2048 bytes per page.
4. Speed: Offers high-speed read and write operations, making it suitable for various applications.
5. Endurance: Typically, it supports a high number of program/erase cycles, enhancing longevity.
6. Power Efficiency: Designed for low power consumption, making it ideal for battery-powered devices.
7. Data Retention: Provides reliable data retention over time, ensuring data integrity.
8. Applications: Commonly used in mobile devices, consumer electronics, and embedded systems.
These features make the NAND512W3A2CN6F a versatile choice for modern storage solutions.
1. Architecture: It utilizes a 2-bit per cell Multi-Level Cell (MLC) technology for efficient data storage.
2. Interface: Supports ONFI (Open NAND Flash Interface) with a standard interface for easy compatibility.
3. Organization: The device is organized as 16 pages of 32KB each, with 2048 bytes per page.
4. Speed: Offers high-speed read and write operations, making it suitable for various applications.
5. Endurance: Typically, it supports a high number of program/erase cycles, enhancing longevity.
6. Power Efficiency: Designed for low power consumption, making it ideal for battery-powered devices.
7. Data Retention: Provides reliable data retention over time, ensuring data integrity.
8. Applications: Commonly used in mobile devices, consumer electronics, and embedded systems.
These features make the NAND512W3A2CN6F a versatile choice for modern storage solutions.
Pinout
The NAND512W3A2CN6F is a 512 Mb (64 MB) NAND Flash memory chip from Micron Technology. It features a total of 48 pins.
Pin Functions:
1. Data I/O Pins (D0-D7): These pins are used for bi-directional data transfer.
2. Address Pins (A0-A12): These pins are used to select the memory address for read/write operations.
3. Chip Enable (CE): This pin enables the chip for operation.
4. Write Enable (WE): This pin is used to write data to the memory.
5. Read Enable (RE): This pin is used to initiate read operations.
6. Ready/Busy (R/B): This pin indicates whether the device is ready for the next operation.
7. Reset (RST): This pin is used to reset the device.
8. Vcc and Vss: These pins are for power supply (Vcc) and ground (Vss).
This configuration allows for efficient data storage and retrieval, making it suitable for various applications in consumer electronics and embedded systems.
Pin Functions:
1. Data I/O Pins (D0-D7): These pins are used for bi-directional data transfer.
2. Address Pins (A0-A12): These pins are used to select the memory address for read/write operations.
3. Chip Enable (CE): This pin enables the chip for operation.
4. Write Enable (WE): This pin is used to write data to the memory.
5. Read Enable (RE): This pin is used to initiate read operations.
6. Ready/Busy (R/B): This pin indicates whether the device is ready for the next operation.
7. Reset (RST): This pin is used to reset the device.
8. Vcc and Vss: These pins are for power supply (Vcc) and ground (Vss).
This configuration allows for efficient data storage and retrieval, making it suitable for various applications in consumer electronics and embedded systems.
Manufacturer
The NAND512W3A2CN6F is manufactured by Micron Technology, Inc. Micron is a global leader in semiconductor design and manufacturing, specializing in memory and storage solutions, including DRAM, NAND flash memory, and other advanced memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and industrial sectors. The company is known for its innovation in memory technology and plays a crucial role in the development of high-performance data storage solutions for various applications.
Application
The NAND512W3A2CN6F is a 512Mb NAND flash memory chip commonly used in various applications, including:
1. Consumer Electronics: Smartphones, tablets, and digital cameras for data storage.
2. Embedded Systems: Industrial devices, automotive applications, and IoT devices for firmware and data storage.
3. Computing: Solid-state drives (SSDs) and memory expansion for laptops and desktops.
4. Data Centers: High-density storage solutions for servers and cloud storage applications.
5. Wearable Technology: Fitness trackers and smartwatches for storing user data and applications.
Its compact size and efficiency make it suitable for diverse applications requiring reliable non-volatile memory.
1. Consumer Electronics: Smartphones, tablets, and digital cameras for data storage.
2. Embedded Systems: Industrial devices, automotive applications, and IoT devices for firmware and data storage.
3. Computing: Solid-state drives (SSDs) and memory expansion for laptops and desktops.
4. Data Centers: High-density storage solutions for servers and cloud storage applications.
5. Wearable Technology: Fitness trackers and smartwatches for storing user data and applications.
Its compact size and efficiency make it suitable for diverse applications requiring reliable non-volatile memory.
Package
The NAND512W3A2CN6F is packaged in a TSOP (Thin Small Outline Package) type, specifically a TSOP-48 package. This package type is commonly used for NAND flash memory devices, allowing for efficient space utilization on circuit boards.
