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P3M12025K3
+StücklisteSICFET N-CH 1200V 113A TO-247-3
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HerstellerPN Junction Halbleiter
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Herstellerteil #P3M12025K3
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Datenblatt P3M12025K3 DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | PN Junction Semiconductor |
| Package / Case | Tube |
| Series | P3M |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 113A |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 35mOhm @ 50A, 15V |
| Vgs(th)(Max) @ Id | 2.4V @ 17.7mA (Typ) |
| Vgs(Max) | +21V, -10V |
| Power Dissipation (Max) | 524W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3L |
