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P3M173K0T3
+StücklisteSICFET N-CH 1700V 4A TO-220-3
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HerstellerPN Junction Halbleiter
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Herstellerteil #P3M173K0T3
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Auf Lager275
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Spezifikationen
| Attribut | Wert |
| Supplier | PN Junction Semiconductor |
| Package / Case | Tube |
| Series | P3M |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain(Id) @ 25°C | 4A |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 2.6Ohm @ 0.6A, 15V |
| Vgs(th)(Max) @ Id | 2.2V @ 0.6mA (Typ) |
| Vgs(Max) | +19V, -8V |
| Power Dissipation (Max) | 75W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-2L |
