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MOSFET 2N-CH 40V 8A 8SOIC
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HerstellerVishay Siliconix
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Herstellerteil #SI4904DY-T1-E3
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Datenblatt SI4904DY-T1-E3 DataSheet
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Auf Lager2999
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Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 20V |
| Power - Max | 3.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4904 |
Übersicht
Description
The device is packaged in a compact SO-8 surface mount format, which facilitates efficient thermal management and space-saving designs. Its low gate threshold voltage (V_GS(th)) enables reliable operation with low drive voltages, making it compatible with various control circuits. The SI4904DY-T1-E3 also features fast switching times, enhancing efficiency in high-frequency applications.
Overall, it is a versatile and reliable choice for engineers seeking to implement efficient power solutions in their designs.
Equivalent
Features
1. Voltage Rating: It offers a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain currents up to 40A, allowing it to support high-power switching.
3. RDS(on): It has a low on-resistance (RDS(on)) typically around 10 mΩ, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 2.5V, enabling efficient driving with low gate voltages.
5. Package Type: It comes in a compact SO-8 package, facilitating space-saving designs.
6. Fast Switching: Designed for high-speed operation, it can switch rapidly, making it ideal for PWM applications.
7. Thermal Performance: With adequate thermal management, it can operate efficiently in various environments.
These features make the SI4904DY-T1-E3 suitable for applications such as power supplies, motor controls, and DC-DC converters.
Pinout
1. Gate (G): Controls the MOSFET switching; turns the device on/off.
2. Drain (D): Connects to the load; current flows out of this terminal when the MOSFET is on.
3. Source (S): Connects to ground or the negative side of the load; current flows into this terminal when the MOSFET is on.
4-8. Internal Functions: The remaining pins are typically related to thermal, mounting, and package integrity.
The device is designed for applications such as power management and switching regulators, providing efficient operation with low on-resistance and fast switching capabilities.
Manufacturer
Vishay is recognized for its focus on innovation and quality, providing solutions that enhance the performance and reliability of electronic devices. The SI4904DY-T1-E3 itself is a N-channel MOSFET, designed for use in applications that require efficient switching and power management. The company's extensive portfolio and expertise make it a key player in the electronics industry, catering to the evolving needs of modern technology.