SIA517DJ-T1-GE3

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SIA517DJ-T1-GE3

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MOSFET N/P-CH 12V 4.5A SC-70-6

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain(Id) @ 25°C 4.5A
Rds On(Max) @ Id Vgs 29mOhm @ 5A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15nC @ 8V
Input Capacitance(Ciss)(Max) @ Vds 500pF @ 6V
Power - Max 6.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The SIA517DJ-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency in switching circuits.
- High Current Handling: Supports up to -5.7A continuous drain current.
- Compact Package: PowerPAK® SC-70 for space-constrained designs.
- Low Gate Charge: Improves switching performance.
Typical applications include load switching, battery protection, and DC-DC converters in portable electronics. The -GE3 suffix indicates halogen-free, RoHS-compliant packaging.
For detailed specs, refer to the datasheet on Vishay’s website.

Equivalent

Equivalent products to the SIA517DJ-T1-GE3 (a 30V P-channel MOSFET) include:
- SI2305DS-T1-GE3 (Vishay)
- DMG2305UX-7 (Diodes Inc.)
- AO3401A (Alpha & Omega)
- IRLML6401TRPBF (Infineon)
These alternatives offer similar specs (30V, ~3A, P-channel) in SOT-23 packages. Verify exact parameters (Rds(on), Vgs) for your application.

Features

The SIA517DJ-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.8A (Continuous Drain Current)
- Low On-Resistance: 47mΩ (max) @ VGS = -10V
- Gate Threshold Voltage: -1V to -3V (typical)
- Fast Switching: Low gate charge (Qg = 12nC typical)
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Applications: Power management, load switching, DC-DC conversion
Designed for efficiency in space-constrained designs, it offers robust performance with low power loss.

Manufacturer

The SIA517DJ-T1-GE3 is a MOSFET manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components.
Vishay is a well-established company known for producing high-performance discrete semiconductors, diodes, resistors, and capacitors. Founded in 1962, it serves industries like automotive, industrial, computing, and consumer electronics, emphasizing innovation and reliability.
The SIA517DJ-T1-GE3 is part of Vishay’s TrenchFET® power MOSFET series, designed for efficient power management in applications like load switching and DC-DC conversion.

Package

The SIA517DJ-T1-GE3 is a DFN-8 (3x3) package type. It is a Dual Flat No-Lead surface-mount package with 8 pins, measuring 3mm x 3mm. This compact design is suitable for high-density PCB applications, offering good thermal and electrical performance.

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