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MOSFET N/P-CH 12V 4.5A SC-70-6
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HerstellerVishay Siliconix
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Herstellerteil #SIA517DJ-T1-GE3
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Datenblatt SIA517DJ-T1-GE3 DataSheet
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Paket SC-70
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Auf Lager4067
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain(Id) @ 25°C | 4.5A |
| Rds On(Max) @ Id Vgs | 29mOhm @ 5A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15nC @ 8V |
| Input Capacitance(Ciss)(Max) @ Vds | 500pF @ 6V |
| Power - Max | 6.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
- Low On-Resistance (RDS(on)): Enhances efficiency in switching circuits.
- High Current Handling: Supports up to -5.7A continuous drain current.
- Compact Package: PowerPAK® SC-70 for space-constrained designs.
- Low Gate Charge: Improves switching performance.
Typical applications include load switching, battery protection, and DC-DC converters in portable electronics. The -GE3 suffix indicates halogen-free, RoHS-compliant packaging.
For detailed specs, refer to the datasheet on Vishay’s website.
Equivalent
- SI2305DS-T1-GE3 (Vishay)
- DMG2305UX-7 (Diodes Inc.)
- AO3401A (Alpha & Omega)
- IRLML6401TRPBF (Infineon)
These alternatives offer similar specs (30V, ~3A, P-channel) in SOT-23 packages. Verify exact parameters (Rds(on), Vgs) for your application.
Features
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.8A (Continuous Drain Current)
- Low On-Resistance: 47mΩ (max) @ VGS = -10V
- Gate Threshold Voltage: -1V to -3V (typical)
- Fast Switching: Low gate charge (Qg = 12nC typical)
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Applications: Power management, load switching, DC-DC conversion
Designed for efficiency in space-constrained designs, it offers robust performance with low power loss.
Manufacturer
Vishay is a well-established company known for producing high-performance discrete semiconductors, diodes, resistors, and capacitors. Founded in 1962, it serves industries like automotive, industrial, computing, and consumer electronics, emphasizing innovation and reliability.
The SIA517DJ-T1-GE3 is part of Vishay’s TrenchFET® power MOSFET series, designed for efficient power management in applications like load switching and DC-DC conversion.