Abbildungen dienen nur als Referenz
SIA519EDJ-T1-GE3
+StücklisteMOSFET N/P-CH 20V 4.5A SC70-6
-
HerstellerVishay Siliconix
-
Herstellerteil #SIA519EDJ-T1-GE3
-
Datenblatt SIA519EDJ-T1-GE3 DataSheet
-
Paket SOT-323
-
Auf Lager1671
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 4.5A |
| Rds On(Max) @ Id Vgs | 40mOhm @ 4.2A, 4.5V |
| Vgs(th)(Max) @ Id | 1.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 350pF @ 10V |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
The SIA519EDJ-T1-GE3 likely refers to a specific model or part, possibly within the context of electronics, manufacturing, or a technical field. This identifier could represent anything from a semiconductor component, a piece of industrial equipment, or a specialized tool. The introduction to such a model would typically cover the basic specifications, intended use, key features, and potential applications. It might also provide details about its design, compatibility with other systems, or guidelines for installation and operation.
For a comprehensive understanding, it would be essential to refer to the manufacturer's datasheet or user manual, which would provide detailed information, including technical specifications, performance parameters, and safety considerations. If this is related to a specific course or subject, the introduction might outline the main topics covered, the learning objectives, and any prerequisites needed for understanding the material. For precise information, consulting the context in which SIA519EDJ-T1-GE3 is used would be necessary.
For a comprehensive understanding, it would be essential to refer to the manufacturer's datasheet or user manual, which would provide detailed information, including technical specifications, performance parameters, and safety considerations. If this is related to a specific course or subject, the introduction might outline the main topics covered, the learning objectives, and any prerequisites needed for understanding the material. For precise information, consulting the context in which SIA519EDJ-T1-GE3 is used would be necessary.
Equivalent
The SIA519EDJ-T1-GE3 is a small-signal MOSFET. Equivalent products can include similar small-signal MOSFETs like:
1. NXP Semiconductors PMV16XN
2. ON Semiconductor NTR4101NT1G
3. Fairchild Semiconductor BSS138
4. Infineon Technologies BSP123
Ensure compatibility by checking specific electrical characteristics and package type before selecting an equivalent.
1. NXP Semiconductors PMV16XN
2. ON Semiconductor NTR4101NT1G
3. Fairchild Semiconductor BSS138
4. Infineon Technologies BSP123
Ensure compatibility by checking specific electrical characteristics and package type before selecting an equivalent.
Features
The SIA519EDJ-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. Key features include:
1. Low On-Resistance: The MOSFET has a low R_DS(on), which reduces power loss and enhances efficiency, making it suitable for applications requiring high efficiency.
2. Compact Package: It is available in a PowerPAK SC-70 package, which is compact and suitable for space-constrained applications, offering efficient thermal performance.
3. Fast Switching: The device supports fast switching, which is beneficial for high-speed applications such as DC-DC converters, improving performance.
4. High Current Capability: It can handle significant amounts of current, making it suitable for power management and load switching applications.
5. Low Gate Charge: This feature contributes to low drive losses and efficient gate control, making it easier to integrate with various circuits.
6. RoHS Compliant: The device is environmentally friendly, complying with the Restriction of Hazardous Substances Directive.
These features make the SIA519EDJ-T1-GE3 ideal for applications in power management, load switching, and efficient power conversion systems.
1. Low On-Resistance: The MOSFET has a low R_DS(on), which reduces power loss and enhances efficiency, making it suitable for applications requiring high efficiency.
2. Compact Package: It is available in a PowerPAK SC-70 package, which is compact and suitable for space-constrained applications, offering efficient thermal performance.
3. Fast Switching: The device supports fast switching, which is beneficial for high-speed applications such as DC-DC converters, improving performance.
4. High Current Capability: It can handle significant amounts of current, making it suitable for power management and load switching applications.
5. Low Gate Charge: This feature contributes to low drive losses and efficient gate control, making it easier to integrate with various circuits.
6. RoHS Compliant: The device is environmentally friendly, complying with the Restriction of Hazardous Substances Directive.
These features make the SIA519EDJ-T1-GE3 ideal for applications in power management, load switching, and efficient power conversion systems.
Pinout
The SIA519EDJ-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. This device is designed for use in power management applications, providing the function of switching and amplifying electronic signals. It typically comes in a small-outline package known as PowerPAK® SC-70.
The pin count for the SIA519EDJ-T1-GE3 is usually three, corresponding to the typical MOSFET layout: Gate (G), Drain (D), and Source (S). The specific package type and layout may vary slightly, but generally, the three-pin configuration remains for the basic functioning of the MOSFET.
In terms of functionality, the Gate is used to control the current flow between the Drain and Source. Applying a voltage to the Gate allows current to flow from the Drain to the Source, making it useful for switching applications. This kind of MOSFET is commonly employed in circuits for load switching and voltage regulation.
The pin count for the SIA519EDJ-T1-GE3 is usually three, corresponding to the typical MOSFET layout: Gate (G), Drain (D), and Source (S). The specific package type and layout may vary slightly, but generally, the three-pin configuration remains for the basic functioning of the MOSFET.
In terms of functionality, the Gate is used to control the current flow between the Drain and Source. Applying a voltage to the Gate allows current to flow from the Drain to the Source, making it useful for switching applications. This kind of MOSFET is commonly employed in circuits for load switching and voltage regulation.
Manufacturer
The SIA519EDJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors, catering to various industries such as automotive, industrial, computing, and telecommunications. Vishay is known for its focus on innovation, quality, and reliability in electronic components, making it a significant player in the electronics industry.
Application
The SIA519EDJ-T1-GE3 is a dual N-channel MOSFET commonly used in various electronic applications. Its primary application areas include power management systems, DC-DC converters, motor control circuits, and load switching. Due to its low on-resistance and high-speed switching capabilities, it is ideal for applications requiring efficient power usage and compact design. Additionally, it is often utilized in consumer electronics, automotive electronics, and industrial automation systems to enhance energy efficiency and performance.
Package
The SIA519EDJ-T1-GE3 is a power MOSFET in a small outline, surface-mount package known as a PowerPAK® SC-70. This package is known for its compact size, providing efficient thermal performance and suitable for high-density applications.
