STD13N60M2

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STD13N60M2

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MOSFET N-CH 600V 11A DPAK

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Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II Plus
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 11A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 380mOhm @ 5.5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 17 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 580 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK

Übersicht

Description

The STD13N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It belongs to the MDmesh M2 series, which is known for its superior performance in reducing power loss and improving efficiency in electronic devices. The key specifications of the STD13N60M2 include a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 13A. It features low on-resistance, enabling efficient current flow with minimal power dissipation.
The STD13N60M2 is encapsulated in a DPAK package, making it suitable for use in compact electronic designs. It is commonly used in applications like power supplies, converters, motor drives, and lighting systems. The device's high voltage capability and fast switching characteristics make it ideal for use in both industrial and consumer electronics. Additionally, the built-in avalanche ruggedness and high dv/dt capability ensure reliable performance in challenging electrical environments. Overall, the STD13N60M2 offers a balance of efficiency, reliability, and compactness for modern electronic applications.

Equivalent

The STD13N60M2 is a MOSFET transistor. Equivalent products include the Infineon IPW60R099C6, Vishay SiHP13N60E-GE3, ON Semiconductor FDP16N50, and Fairchild FQA13N50. These components have similar voltage, current ratings, and applications, but always check the datasheets for exact specifications to ensure compatibility in your specific application.

Features

The STD13N60M2 is a power MOSFET typically used in electronic applications requiring high efficiency and reliability. Here are its key features:
1. Voltage Rating: It has a drain-source voltage (V_ds) of 600V, which makes it suitable for high-voltage applications.

2. Current Rating: The continuous drain current (I_d) is typically up to 13A, allowing it to handle moderate power levels.
3. R_DS(on): It features a low on-state resistance, which reduces power loss and increases efficiency.
4. Technology: It is built using advanced Power MOSFET technology, which enhances switching performance and energy efficiency.
5. Package Type: Often available in DPAK (TO-252) packages, providing compactness and ease of surface mounting.
6. Applications: Suitable for applications in power supply units, lighting, motor control, and other industrial electronics.
7. Frequency: It supports high-speed switching, which is beneficial for applications requiring rapid on/off cycling.
8. Thermal Performance: Designed to handle significant thermal loads, making it robust under demanding conditions.
These features make the STD13N60M2 a versatile component for efficient power management solutions.

Pinout

The STD13N60M2 is a power MOSFET designed for high-voltage applications. It typically comes in a TO-220 package and features three pins:
1. Gate (G): This pin receives the input voltage that controls the MOSFET's switching operation. When a voltage is applied to the gate, it allows current to flow from the drain to the source.
2. Drain (D): This pin is connected to the main load circuit. When the MOSFET is in the "on" state, current flows from the drain to the source.
3. Source (S): This pin is connected to the return path of the circuit, often linked to ground in many applications.
The STD13N60M2 is suited for various applications, including power supply circuits, motor control, and other high-voltage switching tasks due to its high voltage rating of 600V and a continuous drain current of 13A. Its function is to act as an electronic switch or amplifier in these circuits.

Manufacturer

The STD13N60M2 is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer. It is one of the world's largest semiconductor companies, providing a wide range of products for various electronic applications. The company is headquartered in Geneva, Switzerland, and it operates globally, serving markets including automotive, industrial, personal electronics, communications equipment, and the Internet of Things (IoT).
STMicroelectronics specializes in designing and manufacturing semiconductor solutions, which include microcontrollers, sensors, power management devices, and analog devices, among others. They are known for their innovation and contribution to the advancement of semiconductor technology. The company's products are used in a variety of applications, ranging from consumer electronics to more complex industrial systems, reflecting their broad expertise and pivotal role in the electronics industry.

Application

The STD13N60M2 is a 600V, 13A N-channel MOSFET commonly used in various applications, including:
1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient power conversion.
2. Lighting: Employed in LED drivers and electronic ballasts for managing lighting systems.
3. Motor Control: Used in motor drivers for industrial and consumer applications to control speed and torque.
4. Telecommunications: Integrated into telecom power systems for reliable power management.
5. Inverters: Found in DC-AC inverters for solar power systems and uninterruptible power supplies (UPS).
6. Battery Chargers: Applied in the design of efficient battery charging circuits.
Its high voltage and current handling capabilities make it suitable for these high-power applications.

Package

The STD13N60M2 is typically packaged in a DPAK (TO-252) form. This package is commonly used for surface-mount applications in electronic circuits, providing good thermal performance and compact size suitable for high-power components like MOSFETs.

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