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STF13N60M2
+StücklisteMOSFET N-CH 600V 11A TO220FP
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HerstellerSTMikroelektronik
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Herstellerteil #STF13N60M2
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Datenblatt STF13N60M2 DataSheet
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Paket TO-220-3
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Auf Lager2631
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 380mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 580 pF @ 100 V |
| PowerDissipation(Max) | 25W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Übersicht
Description
Key specifications include:
- Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 600 volts.
- Current Capacity: It supports a continuous drain current (I_D) of 13 amperes at 25°C.
- R_DS(on): The on-state resistance is low, typically around 0.36 ohms, which minimizes power loss.
- Gate Charge: The device features a relatively low gate charge, enhancing switching speed and efficiency.
The STF13N60M2 is designed for applications like power supplies, motor drives, and converters, where efficiency and thermal performance are critical. Its TO-220 package ensures easy mounting and effective heat dissipation. Overall, it serves as a robust solution for engineers seeking reliable performance in demanding electrical environments.
Equivalent
1. IRF640 - from International Rectifier (now part of Infineon)
2. STP11NM60 - from STMicroelectronics
3. IXFP12N60P - from IXYS
4. FDPF12N60NZ - from ON Semiconductor (now onsemi)
5. NTP18N60S - from onsemi
Ensure compatibility by checking the datasheets for specific electrical and thermal characteristics before substituting.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 12.6A, making it suitable for medium to high power applications.
2. R_DS(on): The on-resistance is typically low, around 0.26 ohms, which reduces conduction losses and improves efficiency.
3. Technology: It uses MDmesh II technology, which enhances performance in terms of energy efficiency, switching speed, and thermal characteristics.
4. Package Type: The device comes in a TO-220FP package, offering good thermal performance and electrical isolation.
5. Applications: Ideal for use in applications such as power supplies, converters, and motor drives, where efficient power management is crucial.
6. Temperature Range: It operates effectively within a wide temperature range, ensuring reliability in various environmental conditions.
These features make the STF13N60M2 suitable for robust and efficient power switching solutions in a range of electronics applications.
Pinout
1. Pin 1 - Gate (G): This pin is used to control the MOSFET's switching operation. Applying voltage here allows current to flow between the drain and source.
2. Pin 2 - Drain (D): This is the terminal where the current enters the MOSFET. It is connected to the load in most applications.
3. Pin 3 - Source (S): This terminal is connected to the ground or the negative side of the power supply. Current exits the MOSFET through this pin.
The STF13N60M2 is designed for high-efficiency switching applications, featuring low on-state resistance and fast switching capabilities, making it suitable for power conversion, switching power supplies, and other related applications.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Utilized for efficient power conversion in AC-DC and DC-DC converters.
2. Motor Control: Suitable for driving motors in industrial and consumer electronics due to its robust switching performance.
3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) for converting DC to AC power.
4. Lighting Systems: Employed in LED drivers and ballast circuits for efficient lighting control.
5. Power Factor Correction (PFC) Circuits: Helps improve energy efficiency in various electronic devices by reducing reactive power consumption.