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STN1HNK60
+StücklisteMOSFET N-CH 600V 400MA SOT223
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HerstellerSTMikroelektronik
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Herstellerteil #STN1HNK60
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Datenblatt STN1HNK60 DataSheet
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Paket SOT-223
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Auf Lager2873
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 400mA (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8.5Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 3.7V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 156 pF @ 25 V |
| PowerDissipation(Max) | 3.3W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
Übersicht
Description
The STN1HNK60 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is designed for use in electronic circuits where efficient voltage switching and power management are required. This component features a low on-resistance, which reduces power loss during operation, making it suitable for high-efficiency applications.
With a maximum drain-source voltage of 60V and a continuous drain current of up to 12A, the STN1HNK60 is commonly used in DC-DC converters, motor control circuits, and power management systems. Its compact SOT-223 package allows for efficient heat dissipation and space-saving designs in various electronic devices.
The MOSFET is built to handle high-speed switching, which is advantageous in applications where rapid changes in current or voltage are needed. Its robust construction and reliability make it a popular choice among engineers and designers for both consumer electronics and industrial applications.
With a maximum drain-source voltage of 60V and a continuous drain current of up to 12A, the STN1HNK60 is commonly used in DC-DC converters, motor control circuits, and power management systems. Its compact SOT-223 package allows for efficient heat dissipation and space-saving designs in various electronic devices.
The MOSFET is built to handle high-speed switching, which is advantageous in applications where rapid changes in current or voltage are needed. Its robust construction and reliability make it a popular choice among engineers and designers for both consumer electronics and industrial applications.
Equivalent
The STN1HNK60 is a N-channel MOSFET manufactured by STMicroelectronics. Equivalent products from other manufacturers may include:
1. IRF640 by Infineon Technologies (formerly International Rectifier)
2. FQP13N06L by ON Semiconductor
3. NTD5867NL by ON Semiconductor
4. AUIRFS8409 by Infineon Technologies
It's crucial to compare the datasheets for these parts to ensure compatibility in voltage, current, and package specifications.
1. IRF640 by Infineon Technologies (formerly International Rectifier)
2. FQP13N06L by ON Semiconductor
3. NTD5867NL by ON Semiconductor
4. AUIRFS8409 by Infineon Technologies
It's crucial to compare the datasheets for these parts to ensure compatibility in voltage, current, and package specifications.
Features
The STN1HNK60 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Here are some key features:
1. Voltage & Current Ratings: It typically handles a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of around 100A, making it suitable for high-power applications.
2. R_DS(on): The on-state resistance is notably low, ensuring efficient current flow with minimal power loss, which is critical for switching applications.
3. Package Type: It often comes in a TO-220 package, which provides a good balance between size and thermal performance.
4. Gate Threshold Voltage: The gate threshold voltage is designed to be low, enabling easy control with standard logic levels.
5. Thermal Performance: It features good thermal performance, often including a built-in heat sink or requiring an external one to manage heat dissipation effectively.
6. Applications: Commonly used in power management circuits, motor control, and switching power supplies.
These features make the STN1HNK60 a versatile choice for engineers dealing with high-power and high-efficiency requirements.
1. Voltage & Current Ratings: It typically handles a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of around 100A, making it suitable for high-power applications.
2. R_DS(on): The on-state resistance is notably low, ensuring efficient current flow with minimal power loss, which is critical for switching applications.
3. Package Type: It often comes in a TO-220 package, which provides a good balance between size and thermal performance.
4. Gate Threshold Voltage: The gate threshold voltage is designed to be low, enabling easy control with standard logic levels.
5. Thermal Performance: It features good thermal performance, often including a built-in heat sink or requiring an external one to manage heat dissipation effectively.
6. Applications: Commonly used in power management circuits, motor control, and switching power supplies.
These features make the STN1HNK60 a versatile choice for engineers dealing with high-power and high-efficiency requirements.
Pinout
The STN1HNK60 is an N-channel MOSFET transistor. It typically comes in a DPAK or IPAK package, which is a common surface-mount package for power transistors. The pin configuration for a standard DPAK package is as follows:
1. Gate (G): This pin is responsible for controlling the flow of current between the source and the drain. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is where the current enters the transistor. It is connected to the higher potential side of the load.
3. Source (S): This is where the current exits the transistor. It is typically connected to the ground or the lower potential side of the circuit.
4. Tab: The tab is often connected to the drain and can be used to dissipate heat.
The primary function of the STN1HNK60 is to act as a switch or amplifier in electronic circuits, providing efficient control over high-current loads.
1. Gate (G): This pin is responsible for controlling the flow of current between the source and the drain. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is where the current enters the transistor. It is connected to the higher potential side of the load.
3. Source (S): This is where the current exits the transistor. It is typically connected to the ground or the lower potential side of the circuit.
4. Tab: The tab is often connected to the drain and can be used to dissipate heat.
The primary function of the STN1HNK60 is to act as a switch or amplifier in electronic circuits, providing efficient control over high-current loads.
Manufacturer
The STN1HNK60 is a product manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer. It is one of the largest companies in this sector and operates globally, providing a wide range of semiconductor solutions for various electronic applications. The company serves multiple markets, including automotive, industrial, personal electronics, computer, and communications equipment. With a focus on innovation and sustainability, STMicroelectronics is known for producing a diverse array of products, such as microcontrollers, sensors, power management devices, and more, that are used in everyday electronic devices and systems.
Application
The STN1HNK60 is a high-voltage N-channel MOSFET commonly used in various power management applications. Its primary application areas include:
1. Switching Power Supplies: It is employed in power converters and regulators due to its efficiency in switching operations.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics.
3. Lighting Systems: Used in high-efficiency LED drivers and other lighting controls.
4. Renewable Energy Systems: Applicable in solar inverters and other energy conversion systems.
5. Automotive Electronics: Utilized in vehicle electronic control units and battery management systems.
These applications benefit from its high voltage capacity and fast switching capabilities.
1. Switching Power Supplies: It is employed in power converters and regulators due to its efficiency in switching operations.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics.
3. Lighting Systems: Used in high-efficiency LED drivers and other lighting controls.
4. Renewable Energy Systems: Applicable in solar inverters and other energy conversion systems.
5. Automotive Electronics: Utilized in vehicle electronic control units and battery management systems.
These applications benefit from its high voltage capacity and fast switching capabilities.
Package
The STN1HNK60 is typically provided in a DPAK (TO-252) package. This type of package is commonly used for surface-mount applications, offering good thermal performance and ease of handling in automated assembly processes.
