STGWA40H65DFB

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STGWA40H65DFB

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IGBT TRENCH 650V 80A TO247

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Spezifikationen

Attribut Wert
Package Tube
Series HB
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 2V @ 15V, 40A
Power-Max 283 W
SwitchingEnergy 498µJ (on), 363µJ (off)
InputType Standard
GateCharge 210 nC
Td(on/off)@25°C 40ns/142ns
TestCondition 400V, 40A, 5Ohm, 15V
ReverseRecoveryTime(trr) 62 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Übersicht

Description

The STGWA40H65DFB is a 650V, 40A IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for high-efficiency power switching applications. It features a fast switching speed, low saturation voltage (VCE(sat)), and robust thermal performance, making it suitable for inverters, motor drives, and industrial power systems.
Key specifications:
- Voltage Rating: 650V
- Current Rating: 40A (continuous)
- Low VCE(sat): 1.85V (typical)
- Fast Switching: Optimized for reduced losses
- Package: TO-247 (3-pin), ensuring good heat dissipation
The device integrates a freewheeling diode for improved reliability in inductive load applications. Its high current capability and rugged design make it ideal for demanding environments.
For detailed parameters, refer to the datasheet on STMicroelectronics' website.

Features

The STGWA40H65DFB is a 650V, 40A IGBT with a trench gate field-stop structure, designed for high efficiency and robustness. Key features include:
- Low VCE(sat): 1.55V (typ.) at 20A, reducing conduction losses.
- Fast switching: Optimized for high-frequency applications.
- High current capability: 40A continuous current (TC=25°C).
- Temperature range: Operates up to 175°C.
- Diode integrated: Co-packaged with a soft recovery anti-parallel diode.
- Low EMI: Improved switching behavior for noise reduction.
- High reliability: Industrial-grade performance with low thermal resistance.
Ideal for motor drives, inverters, and power converters.

Pinout

The STGWA40H65DFB is a 65A, 650V IGBT with an integrated antiparallel diode, housed in a TO-247 package.
- Pin Count: 3 pins (standard TO-247 configuration).
- Functions:
1. Collector (C): High-voltage/current input.
2. Gate (G): Control terminal (turn on/off via voltage).
3. Emitter (E): Output/common ground.
The integrated diode provides reverse current protection, making it suitable for switching applications like motor drives and inverters.

Manufacturer

The STGWA40H65DFB is manufactured by STMicroelectronics, a leading global semiconductor company.
STMicroelectronics specializes in designing and producing a wide range of semiconductor products, including power devices, microcontrollers, sensors, and analog ICs. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The STGWA40H65DFB is a 650V, 40A IGBT with a fast-switching diode, commonly used in high-efficiency power applications like motor drives and inverters.
STMicroelectronics is known for its innovation in energy-efficient and reliable semiconductor solutions.

Package

The STGWA40H65DFB is an IGBT module in a TO-247-3L package. It features a three-lead (pin) through-hole design, commonly used for high-power applications. The package provides efficient thermal dissipation and mechanical robustness, suitable for industrial and automotive uses. Key specs include 650V voltage rating and 40A current capacity.

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