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TC58BVG0S3HBAI4
+StücklisteIC FLASH 1GBIT PARALLEL 63TFBGA
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HerstellerKioxia America, Inc.
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Herstellerteil #TC58BVG0S3HBAI4
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Paket TFBGA-63
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Auf Lager4616
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Series | Benand™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features of the TC58BVG0S3HBAI4 include its high-speed read and write capabilities, low power consumption, and compact size, which makes it ideal for embedded systems with limited space. The SLC architecture allows each cell to store one bit of data, offering faster performance and greater endurance compared to MLC (Multi-Level Cell) or TLC (Triple-Level Cell) technologies.
The chip supports standard NAND flash command sets and interfaces, enabling seamless integration with a variety of host systems. It's commonly used in industrial, automotive, and consumer applications where robust and reliable storage solutions are critical. Overall, the TC58BVG0S3HBAI4 provides a balance of performance, reliability, and efficiency for demanding storage applications.
Equivalent
1. Samsung K9F1G08U0C
2. Micron MT29F1G08ABADAWP
3. Hynix HY27UF081G2M
4. Spansion S34ML01G100TFI000
These products are generally characterized by similar capacities, voltage requirements, and physical package types. However, compatibility should be verified based on specific application requirements.
Features
1. Type: NAND Flash Memory.
2. Density: Typically offers a storage capacity of 1 gigabit (128 megabytes).
3. Memory Organization: Supports a page size of 2,112 bytes (2,048 bytes for data and 64 bytes for spare).
4. Voltage: Operates at a standard voltage of 3.3V.
5. Interface: Uses a parallel interface, common in NAND flash memory for fast data transfer.
6. Performance: Capable of fast read and write operations suitable for applications requiring efficient data handling.
7. Endurance: Designed to handle a high number of program/erase cycles, contributing to its longevity.
8. Packaging: Typically comes in a TSOP (Thin Small Outline Package) for efficient board space usage.
9. Applications: Commonly used in consumer electronics, solid-state drives, and various embedded systems for reliable data storage solutions.
These features make the TC58BVG0S3HBAI4 suitable for applications where compact and reliable memory solutions are essential.
Pinout
Key features of the TC58BVG0S3HBAI4 include a large storage capacity and the ability to perform write, read, and erase operations, making it suitable for high-density storage solutions. The device operates through a series of control commands sent via specific pins to perform its functions. These pins include address, data, and control signal lines necessary for interfacing with microcontrollers or other logic devices.
The specific pin functions include power supply pins, ground pins, chip enable, write enable, read enable, and input/output pins for data transfer. For precise details on pin assignments and functions, consulting the manufacturer's datasheet is recommended.