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TC58BVG1S3HTAI0
+StücklisteIC FLASH 2GBIT PARALLEL 48TSOP I
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HerstellerKioxia America, Inc.
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Herstellerteil #TC58BVG1S3HTAI0
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Paket TFSOP-48
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Auf Lager5646
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Series | Benand™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 2Gb (256M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features of the TC58BVG1S3HTAI0 include its high-speed read/write capabilities and endurance, making it suitable for applications requiring frequent data access and updates, such as industrial equipment, consumer electronics, and automotive systems. Its compact form factor and energy efficiency also make it ideal for mobile and portable devices. Additionally, the chip supports advanced error correction and wear leveling techniques to enhance data integrity and prolong lifespan. Overall, the TC58BVG1S3HTAI0 is designed to provide robust storage solutions across a variety of applications.
Equivalent
1. Samsung K9F1G08U0C
2. Micron MT29F1G08ABADA
3. Hynix HY27UF081G2M
4. Intel JS29F16B08JAM
These alternatives offer similar specifications and functionality, though it is important to verify compatibility with your specific application.
Features
1. Type: SLC (Single-Level Cell) NAND Flash, which offers better endurance and reliability compared to MLC (Multi-Level Cell) types.
2. Capacity: Typically available in capacities ranging from 1Gb to 8Gb, suitable for embedded systems and consumer electronics.
3. Interface: Parallel interface, which is common for NAND Flash memory and allows for efficient data transfer.
4. Voltage: Operates at a power supply voltage of 3.3V, making it compatible with many electronic devices.
5. Endurance: High endurance with a typical write/erase cycle of 100,000 times, ensuring longevity in data writing and erasing operations.
6. Package Type: Available in a TSOP (Thin Small Outline Package), which is compact and easy to integrate into various circuit boards.
7. Temperature Range: Suitable for industrial and consumer applications with an operating temperature range from -40°C to +85°C.
This makes the TC58BVG1S3HTAI0 ideal for use in applications where data integrity and longevity are crucial.
Pinout
In terms of functionality, the TC58BVG1S3HTAI0 is used for data storage in various electronic devices. It interfaces with a host controller to perform read, write, and erase operations. The chip is organized in a way that allows it to store 1 bit of data per cell, providing robustness for applications that require frequent data rewriting.
The primary functions of the pins include power supply, ground, command latch, address latch, chip enable, read enable, write enable, and I/O ports for data transfer. These pins work together to facilitate communication between the NAND flash memory and the controlling device, enabling efficient data storage and retrieval processes.