TH58NYG3S0HBAI4

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TH58NYG3S0HBAI4

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IC FLASH 8GBIT PARALLEL 63TFBGA

  • HerstellerKioxia America, Inc.

  • Herstellerteil #TH58NYG3S0HBAI4

  • Paket TFBGA-63

  • Auf Lager7732

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Tray
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 8Gb (1G x 8)
Memory Interface Parallel
Write Cycle Time - Word Page 25ns
Access Time 25 ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

Übersicht

Description

"TH58NYG3S0HBAI4" appears to be a part number or model identifier, possibly for a specific piece of hardware, such as a memory chip, storage device, or another electronic component. Without context, it's challenging to provide detailed information. However, in general, part numbers like these are used by manufacturers to categorize and track specific products. They often convey details about the product's specifications, such as its capacity, configuration, or intended application. To understand the particulars of TH58NYG3S0HBAI4, one would typically refer to the manufacturer's datasheet or product documentation, which provides comprehensive technical specifications, performance metrics, and usage guidelines. Additionally, searching for this number in the context of electronics or computing marketplaces might yield reseller or user-generated content related to the item. For precise details, identifying the manufacturer or brand associated with this part number would be essential, as it allows access to official resources or customer support for more information.

Equivalent

The TH58NYG3S0HBAI4 is a Toshiba NAND flash memory chip. Equivalent products from other manufacturers could include NAND flash chips from Samsung, Micron, or SK Hynix with similar specifications in terms of capacity, interface, and performance. It's important to compare specific features such as storage capacity, speed, and interface type to ensure compatibility. Checking datasheets or consulting with manufacturers for cross-reference information can help identify precise equivalents.

Features

The TH58NYG3S0HBAI4 is a Toshiba NAND flash memory chip. Here are some of its key features:
1. Type: It's a NAND flash memory, commonly used for storage in various electronic devices.
2. Capacity: Often available in multiple capacities, depending on specific model configurations.
3. Architecture: Utilizes advanced architecture for efficient data storage and retrieval.
4. Performance: Offers fast read and write speeds, essential for quick data access and storage operations.
5. Endurance: Designed for high endurance to support numerous program/erase cycles, extending the lifespan of the storage.
6. Power Efficiency: Optimized power consumption for better energy management in devices.
7. Compatibility: Compatible with a wide range of devices, including smartphones, tablets, and other portable electronics.
8. Reliability: Incorporates error correction and management features to ensure data integrity and reliability.
9. Security: May include security features to protect data from unauthorized access.
These features make it suitable for various applications requiring reliable and efficient flash storage solutions.

Pinout

The TH58NYG3S0HBAI4 is a 32GB NAND Flash memory chip produced by Toshiba. It typically comes in a TSOP (Thin Small Outline Package) with 48 pins. Each pin on this package serves specific functions crucial for the operation of the NAND Flash memory, including data input/output, power supply, ground, and control signals. The primary function of this chip is to store data non-volatilely, which means it retains information even when power is removed. This makes it suitable for use in a variety of applications such as solid-state drives, USB flash drives, and other forms of portable storage. The pin configuration includes pins for addressing, control (such as chip enable and write enable), and data transfer. For detailed pin descriptions and exact functionality, referring to the manufacturer's datasheet is recommended.

Manufacturer

The TH58NYG3S0HBAI4 is a NAND flash memory chip manufactured by Kioxia Corporation. Kioxia is a Japanese company that specializes in the production and development of flash memory and solid-state drives (SSDs). It was formerly a part of Toshiba Memory Corporation before being rebranded as Kioxia in October 2019. The company is known for its innovation in memory technology and is one of the world's leading producers of NAND flash memory, which is used in a variety of applications, including smartphones, computers, and data centers.

Application

The TH58NYG3S0HBAI4 is a NAND flash memory chip, typically used in various data storage applications. Common application areas include:
1. Consumer Electronics: Smartphones, tablets, and digital cameras where high-capacity, reliable storage is required.
2. Computers and Laptops: As part of SSDs (Solid State Drives) to enhance speed and performance over traditional HDDs.
3. Embedded Systems: Used in industrial and automotive applications for data logging and firmware storage.
4. Networking Devices: Routers and switches for configuration and data caching.
5. IoT Devices: Provides efficient storage solutions in smart devices with limited space.
These applications benefit from the chip's high density, durability, and low power consumption.

Package

The TH58NYG3S0HBAI4 is a NAND flash memory chip produced by Toshiba (now Kioxia). It typically comes in a Ball Grid Array (BGA) package, which is a type of surface-mount packaging used for integrated circuits. This package type provides a compact size and allows for efficient electrical performance, making it suitable for various electronic devices such as smartphones and tablets.

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