Part A
2N7002,215
Nexperia USA Inc.
- Lifecycle
- Active
- Stock
- 6582 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002E-T1-E3 is a compatible functional replacement candidate for the 2N7002,215 in most low-power switching applications, with both devices sharing identical N-channel MOSFET functionality, SOT-23 footprint, and comparable voltage ratings. Designers should validate gate threshold voltage tolerances and thermal performance under application-specific load conditions before finalizing the substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002E-T1-E3
Vishay Siliconix
- Lifecycle
- Active
- Stock
- 7566 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002,215 | 2N7002E-T1-E3 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Defines the maximum voltage the MOSFET can block; must match or exceed the circuit's voltage rail for safe substitution. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Sets the maximum continuous load current the device can carry; identical ratings allow direct substitution in load-switching applications. |
| Drain-Source On-Resistance (Rds(on)) | 1.6 Ω @ Vgs=10V, Id=500mA | 1.6 Ω @ Vgs=10V, Id=500mA | Determines conduction losses and voltage drop; matching values ensure equivalent efficiency and thermal behavior. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Indicates the gate voltage needed to start conduction; matching ranges ensure compatibility with the same logic-level drive circuits. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Defines the maximum safe gate drive voltage; identical limits protect against gate oxide breakdown in the same driver topologies. |
| Power Dissipation (Pd) | 830 mW | 830 mW | Specifies the maximum power the package can dissipate; matching values indicate equivalent thermal capability. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; identical capacitance ensures similar dynamic performance. |
| Package / Mounting | SOT-23 (TO-236AB), Surface Mount | SOT-23 (TO-236), Surface Mount | Determines PCB footprint and assembly compatibility; both use the same SOT-23 footprint, allowing drop-in replacement. |
| Operating Junction Temperature (Tj) | -65 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; the slightly narrower low-end limit of the second part may matter in cold-environment designs. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002,215 | 2N7002E-T1-E3 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 240mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 3Ohm @ 250mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±30V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V | 21 pF @ 5 V |
| Power Dissipation (Max) | 830mW (Ta) | 350mW (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | TrenchMOS™ | - |
Frequently asked questions
What are the key differences between the 2N7002,215 and the 2N7002E-T1-E3?
The 2N7002,215 is a 60 V, 300 mA N-channel MOSFET in a SOT-23 (TO-236AB) package from Nexperia, while the 2N7002E-T1-E3 is a 60 V, 240 mA N-channel MOSFET in a SOT-23 package from Vishay Siliconix. The 2N7002,215 has a higher continuous drain current rating and lower RDS(on) at 10 V VGS, whereas the 2N7002E-T1-E3 offers a lower maximum gate threshold voltage and is specified with different test conditions.
Are the 2N7002,215 and 2N7002E-T1-E3 pin-compatible?
Yes. Both devices use the standard SOT-23 (TO-236AB) package with the same pinout: pin 1 = gate, pin 2 = source, pin 3 = drain. They are footprint-compatible and can be placed on the same PCB land pattern.
Can the 2N7002,215 and 2N7002E-T1-E3 be used interchangeably in a design?
Not without verification. Although both are 60 V N-channel MOSFETs in SOT-23, they differ in continuous drain current (300 mA vs 240 mA), RDS(on) at specified VGS, gate threshold voltage range, and input capacitance. The designer must confirm that the replacement meets the circuit's current, switching, and thermal requirements.
What is the maximum continuous drain current for each device?
The 2N7002,215 is rated for 300 mA continuous drain current at TA = 25 °C. The 2N7002E-T1-E3 is rated for 240 mA continuous drain current at TA = 25 °C. Both ratings are subject to derating based on ambient temperature and PCB thermal conditions.
What are the RDS(on) specifications for the 2N7002,215 and 2N7002E-T1-E3?
The 2N7002,215 specifies RDS(on) of 1.6 Ω typical and 5 Ω maximum at VGS = 10 V, ID = 500 mA. The 2N7002E-T1-E3 specifies RDS(on) of 1.8 Ω typical and 5 Ω maximum at VGS = 10 V, ID = 500 mA. At VGS = 4.5 V, the 2N7002E-T1-E3 specifies 2.8 Ω typical and 7.5 Ω maximum.
What is the gate threshold voltage range for each MOSFET?
The 2N7002,215 has a gate threshold voltage (VGS(th)) range of 1.0 V minimum to 2.5 V maximum at VDS = VGS, ID = 250 µA. The 2N7002E-T1-E3 has a VGS(th) range of 0.8 V minimum to 2.5 V maximum at VDS = VGS, ID = 250 µA. The lower minimum threshold of the 2N7002E-T1-E3 may affect turn-on behavior in low-voltage gate drive circuits.
What are the input capacitance and switching characteristics of these devices?
The 2N7002,215 specifies input capacitance (Ciss) of 50 pF maximum at VDS = 25 V, VGS = 0 V, f = 1 MHz. The 2N7002E-T1-E3 specifies Ciss of 50 pF maximum at VDS = 25 V, VGS = 0 V, f = 1 MHz. Turn-on delay time is 20 ns maximum for the 2N7002,215 and 20 ns maximum for the 2N7002E-T1-E3, both at VDD = 30 V, ID = 500 mA, RG = 10 Ω.
What are the power dissipation ratings for the 2N7002,215 and 2N7002E-T1-E3?
The 2N7002,215 is rated for 830 mW total power dissipation at TA = 25 °C. The 2N7002E-T1-E3 is rated for 350 mW total power dissipation at TA = 25 °C. The higher power rating of the 2N7002,215 allows it to handle more thermal load in the same package under identical mounting conditions.
Which manufacturer produces each part and what are the package designations?
The 2N7002,215 is manufactured by Nexperia (formerly NXP Semiconductors) and uses the SOT-23 (TO-236AB) package designation. The 2N7002E-T1-E3 is manufactured by Vishay Siliconix and uses the SOT-23 package designation. Both are RoHS-compliant and available through authorized distributors such as DigiKey and Mouser.