2N7002K-T1-GE3 vs 2N7002,215

Dieser detaillierte Vergleich von 2N7002K-T1-GE3 und 2N7002,215 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-T1-GE3 is a compatible functional replacement candidate for the 2N7002,215, with both N-channel MOSFETs sharing identical drain-source voltage, continuous drain current, and RDS(on) characteristics. Designers should validate gate threshold voltage tolerance and package footprint compatibility before committing to a drop-in substitution.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Gate Threshold Voltage Validation required

Package Type Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002K-T1-GE3

Vishay Siliconix

Lifecycle: Active
Stock: 4371 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

Part B

2N7002,215

Nexperia USA Inc.

Lifecycle: Active
Stock: 6582 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Anfrage Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002K-T1-GE3	2N7002,215
Series	TrenchFET®	TrenchMOS™
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	300mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	10V
Rds On(Max) @ Id Vgs	2Ohm @ 500mA, 10V	5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	0.6 nC @ 4.5 V	-
Vgs(Max)	±20V	±30V
Input Capacitance(Ciss)(Max) @ Vds	30 pF @ 25 V	50 pF @ 10 V
Power Dissipation (Max)	350mW (Ta)	830mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare Anfrage