Part A
2N7002E
Elektronische Komponenten von Panasonic
- Lifecycle
- Active
- Stock
- 3552 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002E is a compatible functional replacement candidate for the 2N7002 in most low-power switching applications, with identical package, pinout, and voltage ratings. Designers should validate gate threshold and on-resistance tolerances against the target circuit's drive conditions before committing to production.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002
STMikroelektronik
- Lifecycle
- Active
- Stock
- 1470 Stückzahl
- Package
- SOT-23
- Series
- Transistoren von FETs, MOSFETs von Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002 | 2N7002E | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Defines the maximum voltage the device can block; identical ratings mean both can be used in the same voltage rails. |
| Continuous Drain Current (Id) | 115 mA (at 25°C) | 115 mA (at 25°C) | Sets the maximum continuous current handling capability; matching values indicate equivalent load-driving capacity. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω max at Vgs=10V, Id=0.5A | 7.5 Ω max at Vgs=10V, Id=0.5A | Determines conduction losses; identical Rds(on) means similar efficiency and heat dissipation in switching applications. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V min, 2.5 V max | 1.0 V min, 2.5 V max | Indicates the voltage needed to turn the MOSFET on; matching thresholds ensure compatible logic-level drive. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Limits the maximum gate drive voltage; identical ratings mean the same gate drive circuitry can be used. |
| Power Dissipation (Pd) | 200 mW (at 25°C) | 200 mW (at 25°C) | Specifies the maximum power the package can dissipate; matching values indicate equivalent thermal limits. |
| Input Capacitance (Ciss) | 50 pF typ at Vds=25V, Vgs=0V | 50 pF typ at Vds=25V, Vgs=0V | Affects switching speed and drive requirements; identical capacitance means similar dynamic performance. |
| Package / Mounting Type | SOT-23, Surface Mount | SOT-23, Surface Mount | Determines PCB footprint and assembly compatibility; identical packages allow direct drop-in replacement. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002E | 2N7002 |
|---|---|---|
| Part Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 200mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 100mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.8 nC @ 4.5 V | 2 nC @ 5 V |
| Vgs(Max) | ±20V | ±18V |
| Input Capacitance(Ciss)(Max) @ Vds | 40 pF @ 10 V | 43 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 350mW (Tc) |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | - | STripFET™ |
Frequently asked questions
What are the key differences between the 2N7002 and 2N7002E MOSFETs?
The 2N7002 and 2N7002E are both N-channel enhancement-mode MOSFETs, but the 2N7002E is an enhanced version offering lower on-resistance (RDS(on)) and improved switching characteristics. The 2N7002E typically features a lower threshold voltage and reduced gate charge, making it more suitable for low-voltage, high-efficiency switching applications. Always verify exact parameters against the specific manufacturer datasheet, as specifications can vary between suppliers.
Are the 2N7002 and 2N7002E pin-compatible?
Yes, both devices are typically offered in the same SOT-23 (TO-236) package with identical pinouts: Gate (pin 1), Source (pin 2), and Drain (pin 3). This allows for direct PCB footprint compatibility. However, always confirm package and pinout details from the specific manufacturer datasheet before substitution.
Can the 2N7002E be used as a direct replacement for the 2N7002?
In many cases, the 2N7002E can replace the 2N7002 due to its improved electrical characteristics, provided the circuit's voltage and current requirements are within the 2N7002E's ratings. However, differences in threshold voltage, input capacitance, and switching speed may affect circuit behavior. Design validation against the target application and manufacturer datasheet is required before substitution.
What is the typical drain-source voltage (VDS) rating for these MOSFETs?
Both the 2N7002 and 2N7002E typically have a maximum drain-source voltage (VDS) rating of 60 V. This rating is consistent across major manufacturers such as ON Semiconductor (onsemi), Nexperia, and Vishay. Always confirm the VDS rating from the specific manufacturer datasheet for the exact part number being used.
How do the on-resistance (RDS(on)) values compare between the 2N7002 and 2N7002E?
The 2N7002E generally offers lower on-resistance (RDS(on)) than the standard 2N7002. For example, at VGS = 10 V and ID = 500 mA, the 2N7002 typically specifies RDS(on) around 1.2 Ω to 5 Ω, while the 2N7002E may specify values in the range of 0.8 Ω to 2 Ω depending on the manufacturer. Exact values must be verified from the respective manufacturer datasheets.
What is the maximum continuous drain current (ID) for the 2N7002 and 2N7002E?
Both devices typically have a maximum continuous drain current (ID) rating of approximately 200 mA to 300 mA at 25°C, depending on the manufacturer and test conditions. The 2N7002E may have a slightly higher or equivalent rating. Always refer to the specific manufacturer datasheet for the exact ID rating and derating curves.
Are the 2N7002 and 2N7002E RoHS compliant?
Most modern 2N7002 and 2N7002E devices from major manufacturers such as onsemi, Nexperia, and Vishay are RoHS compliant and halogen-free. However, compliance can vary by manufacturer and production date. Verify RoHS status from the manufacturer's official documentation or trusted distributor listings such as DigiKey or Mouser.
What are the typical applications for the 2N7002 and 2N7002E?
Both MOSFETs are commonly used in low-power switching applications, including level shifting, load switching, relay drivers, and signal amplification. The 2N7002E, with its improved RDS(on) and switching performance, is often preferred for more efficiency-sensitive designs such as portable electronics and battery-powered devices. Application suitability should be validated against the specific manufacturer datasheet.