2N7002E vs 2N7002K-7

Dieser detaillierte Vergleich von 2N7002E und 2N7002K-7 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002E are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002K-7 a viable functional substitute for the 2N7002E in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
On-Resistance RDS(on) Validation required
Package Type High match

Parts at a glance

Part A

2N7002E

Elektronische Komponenten von Panasonic

Lifecycle
Active
Stock
3552 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
Part B

2N7002K-7

Dioden Incorporated

Lifecycle
Active
Stock
5630 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002K-7
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 380mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V 0.3 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V 50 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 370mW (Ta)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount