2N7002K-T1-GE3 vs 2N7002K-7

Dieser detaillierte Vergleich von 2N7002K-T1-GE3 und 2N7002K-7 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002K-T1-GE3 are functionally equivalent N-channel MOSFETs sharing identical electrical characteristics, package type, and pinout, making them suitable drop-in replacements for each other in most designs. The primary distinction lies in manufacturer sourcing and supply chain considerations rather than electrical performance.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

RDS(on) High match

Review the critical differences →

Parts at a glance

Part A

2N7002K-T1-GE3

Vishay Siliconix

Lifecycle: Active
Stock: 4371 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

Part B

2N7002K-7

Dioden Incorporated

Lifecycle: Active
Stock: 5630 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002K-T1-GE3	2N7002K-7
Series	TrenchFET®	-
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	380mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	5V, 10V
Rds On(Max) @ Id Vgs	2Ohm @ 500mA, 10V	2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs	0.6 nC @ 4.5 V	0.3 nC @ 4.5 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	30 pF @ 25 V	50 pF @ 25 V
Power Dissipation (Max)	350mW (Ta)	370mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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