Part A
2N7002E
Elektronische Komponenten von Panasonic
- Lifecycle
- Active
- Stock
- 3552 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002K and 2N7002E are both N-channel enhancement-mode MOSFETs in SOT-23 packages with 60 V drain-source voltage ratings, making them functionally interchangeable in most low-power switching and level-shifting applications. However, designers should verify gate threshold voltage, on-resistance, and continuous drain current against the specific circuit requirements before committing to a drop-in substitution.
Drain-Source Voltage Rating
High match
Package Type
High match
Continuous Drain Current
Validation required
On-Resistance
Validation required
Parts at a glance
Part B
2N7002K
Rectron USA
- Lifecycle
- Active
- Stock
- 3271 Stückzahl
- Package
- SOT-23
- Series
- Transistoren von FETs, MOSFETs von Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002K | 2N7002E | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 60 V | 60 V | Sets the maximum voltage the device can block in the off state; matching ratings allow direct substitution in the same voltage rails. |
| Continuous Drain Current (ID) | 300 mA | 300 mA | Defines the maximum continuous load current; identical ratings ensure the same current-handling capability in the application. |
| Drain-Source On-Resistance (RDS(on)) | 1.6 Ω @ VGS = 10 V | 1.6 Ω @ VGS = 10 V | Determines conduction losses; equal RDS(on) means similar efficiency and thermal behavior when switching or conducting. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Indicates the gate voltage needed to start conduction; matching ranges ensure compatible logic-level drive conditions. |
| Gate-Source Voltage (VGS) Max | ±20 V | ±20 V | Specifies the maximum safe gate drive voltage; identical limits protect the gate oxide under the same drive circuitry. |
| Power Dissipation (PD) | 350 mW | 350 mW | Defines the maximum power the package can dissipate; equal ratings indicate comparable thermal limits for the same PCB layout. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; matching capacitance preserves timing and driver compatibility. |
| Package | SOT-23 | SOT-23 | Determines footprint and assembly compatibility; identical packages allow drop-in replacement without PCB changes. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002E | 2N7002K |
|---|---|---|
| Part Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 100mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 1.9V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.8 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 40 pF @ 10 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 350mW (Ta) |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the 2N7002K and 2N7002E N-channel MOSFETs?
Both are 60 V, 300 mA N-channel enhancement-mode MOSFETs in SOT-23 packages, but they differ in key parameters. The 2N7002K typically features a lower maximum gate threshold voltage and a lower on-resistance (RDS(on)) at VGS = 10 V, while the 2N7002E is specified with slightly higher RDS(on) and different input capacitance characteristics. Designers should verify the exact datasheet values from the respective manufacturer before substitution.
Can the 2N7002K and 2N7002E be used interchangeably in a design?
Direct substitution is possible only after comparing critical parameters such as VGS(th), RDS(on), input capacitance (Ciss), and switching characteristics against the target circuit requirements. Because the two parts may have different RDS(on) and threshold voltage specifications, a drop-in replacement without validation is not recommended.
What is the maximum drain-source voltage (VDS) rating for both the 2N7002K and 2N7002E?
Both the 2N7002K and 2N7002E are rated for a maximum drain-source voltage (VDS) of 60 V, making them suitable for low-voltage switching applications within that limit.
What is the continuous drain current (ID) rating for the 2N7002K and 2N7002E?
Both devices are typically rated for a continuous drain current (ID) of 300 mA at 25°C ambient temperature, subject to derating at higher temperatures as specified in the manufacturer datasheet.
Do the 2N7002K and 2N7002E have the same package and pinout?
Yes, both the 2N7002K and 2N7002E are commonly offered in the SOT-23 (TO-236) surface-mount package with the standard pinout: pin 1 = gate, pin 2 = source, pin 3 = drain. This package compatibility allows for similar PCB land patterns, but electrical differences must still be evaluated.
How do the gate threshold voltages (VGS(th)) of the 2N7002K and 2N7002E compare?
The 2N7002K typically specifies a maximum gate threshold voltage (VGS(th)) of 2.5 V, while the 2N7002E may specify a different maximum, often around 3 V. Because VGS(th) affects logic-level compatibility, designers should confirm the exact value from the manufacturer datasheet for the specific part being used.
Are the 2N7002K and 2N7002E suitable for logic-level gate drive applications?
Both devices can be driven from logic-level signals, but their threshold voltages and RDS(on) at low gate voltages (e.g., VGS = 4.5 V) may differ. The 2N7002K is often characterized for lower-voltage gate drive, while the 2N7002E may require a higher VGS to achieve comparable RDS(on). Always verify the RDS(on) specification at the intended gate drive voltage.
What are the typical applications for the 2N7002K and 2N7002E?
Both MOSFETs are commonly used in low-power switching applications such as level shifting, load switching, relay drivers, and small-signal amplification. Their 60 V, 300 mA ratings make them suitable for interfacing low-voltage logic with higher-voltage loads in consumer, industrial, and automotive electronic circuits.