FDG6301N vs FDG6304P_D87Z

Dieser detaillierte Vergleich von FDG6301N und FDG6304P_D87Z bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDG6301N

Onsemi

Lifecycle
Active
Stock
7191 Stückzahl
Series
Transistoren für FETs, MOSFETs für FET, MOSFET Arrays
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDG6301N FDG6304P_D87Z
Supplier - onsemi
Part Status Obsolete Obsolete
FET Type - 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 25V 25V
Current - Continuous Drain(Id) @ 25°C - 410mA
Rds On(Max) @ Id Vgs - 1.1Ohm @ 410mA, 4.5V
Vgs(th)(Max) @ Id - 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 1.5nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds - 62pF @ 10V
Power - Max 300mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number FDG6301 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
Current - Continuous Drain (Id) @ 25°C 220mA -
Rds On (Max) @ Id, Vgs 4Ohm @ 220mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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