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AUIRFR6215TRL
+StücklisteMOSFET P-CH 150V 13A DPAK
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HerstellerInfineon-Technologien
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Herstellerteil #AUIRFR6215TRL
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Datenblatt AUIRFR6215TRL DataSheet
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Paket TO-252-3
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Auf Lager1833
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 295mOhm @ 6.6A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 66 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 860 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
Übersicht
Description
Key highlights:
- Voltage Rating: 60V
- Current Rating: 15A (continuous)
- Low RDS(on): 9.5mΩ (VGS = 10V)
- Fast Switching: Optimized for high-frequency operation
- Package: D2PAK (TO-263), suitable for surface-mount applications
Ideal for automotive, industrial, and consumer electronics, it offers robust thermal performance and reliability. The device is RoHS-compliant and supports lead-free soldering.
For detailed specs, refer to the datasheet.
Equivalent
- IRFR6215TRPBF (Infineon)
- STP15NF10 (STMicroelectronics)
- FQP15N10 (Fairchild/ON Semi)
- IPP15N10N (Infineon)
These are similar N-channel MOSFETs with comparable voltage/current ratings. Always verify datasheet specs for exact compatibility.
Features
- Voltage Rating: 150V drain-source voltage (VDS).
- Current Handling: 62A continuous drain current (ID) at 25°C.
- Low On-Resistance: 12mΩ (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed applications with low gate charge (Qg = 60nC typical).
- Robust Design: Avalanche energy rated, improving reliability in harsh conditions.
- Package: D2PAK (TO-263), suitable for power applications.
- Logic-Level Gate Drive: Compatible with 4.5V gate drive (VGS(th) = 2V typical).
Ideal for automotive, motor control, and power management systems.
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): High-current output, connected to the load.
3. Source (S): Ground reference for the MOSFET.
4. No Connection (NC): Unused pin (may be absent in some variants).
5. Kelvin Source (S'): Provides accurate voltage sensing for improved switching performance.
This N-channel MOSFET is designed for high-efficiency power applications, featuring low on-resistance (RDS(on)) and fast switching.
Application
1. Automotive Systems – Engine control, lighting, and power distribution.
2. Power Supplies – DC-DC converters and SMPS.
3. Motor Control – Drives for brushed/brushless motors.
4. Industrial Applications – Relays, solenoids, and inverters.
5. Renewable Energy – Solar inverters and battery management.
Its low on-resistance (RDS(on)) and high current handling make it suitable for high-efficiency switching applications.
