BSC035N10NS5ATMA1

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BSC035N10NS5ATMA1

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MOSFET N-CH 100V 100A TDSON

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 100A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 3.5mOhm @ 50A, 10V
Vgs(th)(Max) @ Id 3.8V @ 115µA
Gate Charge(Qg)(Max) @ Vgs 87 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 6500 pF @ 50 V
Power Dissipation (Max) 2.5W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7

Übersicht

Description

The BSC035N10NS5ATMA1 is a 100V N-channel MOSFET from Infineon’s OptiMOS™ 5 series, designed for high-efficiency power applications. Key features include:
- Low on-resistance (RDS(on)): 3.5 mΩ (max) at 10 V, reducing conduction losses.
- High current handling: Up to 35 A continuous drain current (ID).
- Fast switching: Optimized for applications like DC-DC converters, motor drives, and SMPS.
- Compact package: PG-TDSON-8 (3.3x3.3 mm), suitable for space-constrained designs.
Ideal for automotive (AEC-Q101 qualified) and industrial uses, it balances performance with thermal efficiency. Check the datasheet for detailed specs.

Equivalent

Equivalent products to the BSC035N10NS5ATMA1 (100V, 35A, N-channel MOSFET) include:
- Infineon IPD90N04S4-04 (40V, 90A)
- Vishay SiR428DP (40V, 120A)
- ON Semiconductor NTMFS5C628NL (30V, 100A)
For closer matches, check Infineon BSC010NE2LS5 (25V, 100A) or STMicroelectronics STL120N10F7 (100V, 120A). Verify specs (voltage, current, RDS(on)) for compatibility.

Features

The BSC035N10NS5ATMA1 is a 100V N-channel MOSFET from Infineon's OptiMOS 5 series, optimized for high efficiency and power density. Key features:
- Voltage Rating: 100V
- Current Rating: 35A (continuous)
- Low RDS(on): 3.5mΩ (max @ VGS=10V)
- Fast Switching: Low gate charge (Qg) for reduced losses
- AEC-Q101 Qualified: Suitable for automotive applications
- Package: TO-263 (D²PAK), surface-mount
- Thermal Performance: Low thermal resistance for better heat dissipation
Ideal for DC-DC converters, motor drives, and automotive power systems.

Pinout

The BSC035N10NS5ATMA1 is a 100V N-channel MOSFET in a PG-TDSON-8 package with 5 pins (some pins are internally connected).
Key Functions:
- Pins 1, 2, 3, 6, 7, 8: Drain (D) – High-current power terminal.
- Pin 4: Gate (G) – Controls switching.
- Pin 5: Source (S) – Ground/reference terminal.
Features:
- Low on-resistance (3.5 mΩ max).
- High current handling (35A continuous).
- Optimized for power switching in applications like motor drives and DC-DC converters.

Manufacturer

The BSC035N10NS5ATMA1 is a power MOSFET manufactured by Infineon Technologies, a leading German semiconductor company specializing in automotive, industrial, and power management solutions. Infineon is known for high-performance components, including transistors, microcontrollers, and sensors, serving industries like automotive, renewable energy, and IoT.
This specific MOSFET is part of Infineon's OptiMOS™ 5 series, designed for high efficiency in applications like DC-DC converters and motor drives. The company is recognized for innovation in energy efficiency and reliability.

Application

The BSC035N10NS5ATMA1 is a 100V N-channel MOSFET from Infineon, optimized for high-efficiency power applications. Key application areas include:
- DC-DC Converters: Used in voltage regulation for servers, telecom, and industrial systems.
- Motor Control: Efficient switching in automotive and industrial motor drives.
- Power Supplies: High-performance SMPS (Switched-Mode Power Supplies) and UPS systems.
- Battery Management: Protection and switching in Li-ion battery packs (e.g., e-mobility, energy storage).
- Synchronous Rectification: Improves efficiency in AC-DC and DC-DC converters.
Its low on-resistance (3.5mΩ) and high current handling make it ideal for energy-sensitive designs.

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