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BSS806NH6327XTSA1
+StücklisteMOSFET N-CH 20V 2.3A SOT23-3
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HerstellerInfineon-Technologien
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Herstellerteil #BSS806NH6327XTSA1
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Datenblatt BSS806NH6327XTSA1 DataSheet
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Auf Lager23749
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Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 2.3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 2.5V |
| Rds On(Max) @ Id Vgs | 57mOhm @ 2.3A, 2.5V |
| Vgs(th)(Max) @ Id | 750mV @ 11µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.7 nC @ 2.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 529 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
Übersicht
Description
The BSS806NH6327XTSA1 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in electronic circuits. Manufactured by Infineon Technologies, this component falls under the category of N-channel MOSFETs, which are commonly used for switching and amplifying electronic signals. The part number indicates various specifications, such as voltage and current ratings, package type, and other technical characteristics relevant to its application in circuits.
Key features of the BSS806NH6327XTSA1 typically include low on-state resistance, high-speed switching capabilities, and robust thermal performance. These features make it well-suited for applications in power management, load switch, and DC-DC conversion in consumer electronics, automotive, and industrial systems. The component generally comes in a standard surface-mount package, which facilitates easy integration into printed circuit boards (PCBs).
Overall, the BSS806NH6327XTSA1 is a versatile and efficient MOSFET designed to provide reliable performance in a variety of electronic applications.
Key features of the BSS806NH6327XTSA1 typically include low on-state resistance, high-speed switching capabilities, and robust thermal performance. These features make it well-suited for applications in power management, load switch, and DC-DC conversion in consumer electronics, automotive, and industrial systems. The component generally comes in a standard surface-mount package, which facilitates easy integration into printed circuit boards (PCBs).
Overall, the BSS806NH6327XTSA1 is a versatile and efficient MOSFET designed to provide reliable performance in a variety of electronic applications.
Equivalent
The BSS806NH6327XTSA1 is an N-channel MOSFET produced by Infineon. Some equivalent products include:
1. NXP PSMN2R4-30YLD: A 30V, N-channel MOSFET.
2. ON Semiconductor NTMFS5C404NL: A similar 30V N-channel MOSFET.
3. Vishay SiRA14DP: Another alternative with similar specifications.
Always verify specific parameters such as voltage, current ratings, and package type to ensure compatibility with your application.
1. NXP PSMN2R4-30YLD: A 30V, N-channel MOSFET.
2. ON Semiconductor NTMFS5C404NL: A similar 30V N-channel MOSFET.
3. Vishay SiRA14DP: Another alternative with similar specifications.
Always verify specific parameters such as voltage, current ratings, and package type to ensure compatibility with your application.
Features
The BSS806NH6327XTSA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. Key features of this MOSFET include:
1. Low On-Resistance: It offers low R_DS(on), reducing power loss and improving efficiency.
2. Drain-Source Voltage (V_DS): Typically around 60V, suitable for various power supplies and motor control applications.
3. Continuous Drain Current (I_D): Can handle a significant continuous current, often around 5.5A, depending on the cooling conditions.
4. High-Speed Switching: It is designed for fast switching, enhancing performance in high-frequency circuits.
5. Package Type: Generally available in standard surface-mount packages like SOT-23 or similar, facilitating compact and efficient board design.
6. Thermal Resistance: Optimized for efficient heat dissipation to maintain performance in high-temperature conditions.
7. Enhancement Mode: This MOSFET operates with a positive gate-source voltage, making it easy to interface with typical microcontroller logic levels.
These features make the BSS806NH6327XTSA1 suitable for power conversion, motor drives, and other applications requiring efficient power management.
1. Low On-Resistance: It offers low R_DS(on), reducing power loss and improving efficiency.
2. Drain-Source Voltage (V_DS): Typically around 60V, suitable for various power supplies and motor control applications.
3. Continuous Drain Current (I_D): Can handle a significant continuous current, often around 5.5A, depending on the cooling conditions.
4. High-Speed Switching: It is designed for fast switching, enhancing performance in high-frequency circuits.
5. Package Type: Generally available in standard surface-mount packages like SOT-23 or similar, facilitating compact and efficient board design.
6. Thermal Resistance: Optimized for efficient heat dissipation to maintain performance in high-temperature conditions.
7. Enhancement Mode: This MOSFET operates with a positive gate-source voltage, making it easy to interface with typical microcontroller logic levels.
These features make the BSS806NH6327XTSA1 suitable for power conversion, motor drives, and other applications requiring efficient power management.
Pinout
The BSS806NH6327XTSA1 is a small-signal MOSFET transistor manufactured by Infineon Technologies. It typically comes in a leadless package, such as the TSOP-6 or SOT-363. This component is part of the OptiMOS™ family and is used for load switching and general-purpose applications.
The MOSFET features a low drain-to-source on-resistance and efficient power handling capabilities in compact packages. Regarding pin count, this MOSFET typically has 6 pins. The pins function as follows:
1. Gate (G): Controls the conductivity between the drain and source.
2. Drain (D): Current flows into this terminal.
3. Source (S): Current flows out of this terminal.
4. Body (B): Often internally connected to the source to avoid body effect; not always externally accessible.
These specifications make it suitable for applications where space is limited, and efficient switching is required. For precise details, always refer to the component's datasheet.
The MOSFET features a low drain-to-source on-resistance and efficient power handling capabilities in compact packages. Regarding pin count, this MOSFET typically has 6 pins. The pins function as follows:
1. Gate (G): Controls the conductivity between the drain and source.
2. Drain (D): Current flows into this terminal.
3. Source (S): Current flows out of this terminal.
4. Body (B): Often internally connected to the source to avoid body effect; not always externally accessible.
These specifications make it suitable for applications where space is limited, and efficient switching is required. For precise details, always refer to the component's datasheet.
Manufacturer
The BSS806NH6327XTSA1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that focuses on developing and producing a wide range of semiconductor solutions. The company is well-known for its innovation in power semiconductors, microcontrollers, sensors, and automotive electronics. Infineon plays a significant role in various sectors, including automotive, industrial power control, power management, and digital security solutions. They are recognized for their commitment to energy efficiency, mobility, and security in electronic devices.
Application
The BSS806NH6327XTSA1 is a N-channel MOSFET commonly used in various applications due to its efficient performance characteristics. Its primary application areas include:
1. Power Management: Used in power conversion and distribution systems.
2. Switching Applications: Suitable for load switch and relay replacement.
3. Consumer Electronics: Utilized in devices for energy efficiency and compact design.
4. Automotive Systems: Employed in electronic control units and body electronics.
5. Industrial Automation: Applied in motor control and robotics for efficient power handling.
These applications leverage its low on-resistance and fast switching capabilities.
1. Power Management: Used in power conversion and distribution systems.
2. Switching Applications: Suitable for load switch and relay replacement.
3. Consumer Electronics: Utilized in devices for energy efficiency and compact design.
4. Automotive Systems: Employed in electronic control units and body electronics.
5. Industrial Automation: Applied in motor control and robotics for efficient power handling.
These applications leverage its low on-resistance and fast switching capabilities.
Package
The BSS806NH6327XTSA1 is a MOSFET transistor packaged in a SOT-363 (also known as SC-70-6) package. This is a small surface-mount package commonly used for discrete semiconductor components, offering a compact design suitable for space-constrained applications.
