H26M62002JPR

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H26M62002JPR

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32GB eMMC 5.1 FBGA-96 Memory (ICs) RoHS

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Spezifikationen

Attribut Wert
Packaging FBGA-96
Controller Operating Voltage (VCCQ) 1.7V~1.95V
Controller Stand-By Current 120uA
Interface eMMC 5.1
Memory Size 32GB
NAND Operating Voltage (VCCF) 2.7V~3.6V
NAND Stand-By Current 60uA
Operating temperature -25℃~+85℃
Reading Speed in Sequence 280MB/S
Writing Speed in Sequence 90MB/S

Übersicht

Description

H26M62002JPR appears to be a part number or model identifier, potentially related to an electronic component, such as memory or storage device, manufactured by a company like SK Hynix or another semiconductor manufacturer. Unfortunately, without specific context or access to a detailed database, it is challenging to provide precise information about this specific part number.
Generally, H26M62002JPR could refer to a NAND flash memory chip or another type of memory module used in various electronic devices, including smartphones, tablets, or computers. These components are integral for data storage and are characterized by parameters such as storage capacity, data transfer speed, operating voltage, and form factor.
For more detailed information, including specifications and applications, you would typically consult the manufacturer's datasheet or technical documentation. This would provide insights into the features, recommended applications, and compatibility with other systems, crucial for developers and engineers working on related technological projects.

Equivalent

The H26M62002JPR is a NAND flash memory chip, typically found in smartphones and other devices. Equivalent products would include NAND flash memory chips with similar specifications from other manufacturers like Micron, Toshiba (now Kioxia), Western Digital (SanDisk), and SK Hynix. When looking for equivalents, consider the same NAND type (e.g., 3D NAND), similar storage capacity, interface, and performance characteristics. Specific model numbers may vary, so consulting datasheets for detailed comparisons is advisable.

Features

The H26M62002JPR is a NAND flash memory chip, typically used for data storage in a variety of electronic devices. Here are some of its key features:
1. Type: It's a NAND flash memory, which is known for its high-density data storage and non-volatile nature, meaning it retains data even when the power is turned off.
2. Capacity: The chip commonly has a storage capacity of 16GB, making it suitable for devices that require moderate storage.
3. Interface: It often supports a standard interface for easy integration with microcontrollers and processors.
4. Performance: It offers good read and write speeds, ensuring efficient data transfer and retrieval.
5. Endurance: NAND flash generally has a decent write/erase cycle endurance, making it reliable for repeated data writing and deletion.
6. Form Factor: The chip is typically available in a compact package suitable for integration into small electronic devices.
These features make the H26M62002JPR a versatile component for use in smartphones, tablets, and other portable electronic devices.

Pinout

The H26M62002JPR is a NAND flash memory chip manufactured by SK Hynix. It typically comes in a Ball Grid Array (BGA) package. The exact pin count can vary depending on the specific package version, but such NAND flash memory chips often have pin counts in the range of 100-200. However, without the specific datasheet for the H26M62002JPR, I cannot provide the exact pin count.
In terms of function, the H26M62002JPR is used for data storage in various electronic devices, such as smartphones, tablets, or embedded systems. It enables large volumes of data to be stored in a non-volatile format, meaning data is retained even when the power is turned off. Key functions typically include data read and write operations, error correction, and wear leveling to prolong the chip's lifespan. For precise details, including the exact pin count and functions, the datasheet from SK Hynix would be required.

Manufacturer

The H26M62002JPR is a NAND flash memory chip manufactured by SK Hynix. SK Hynix is a South Korean company that specializes in the production of semiconductors, including DRAM and NAND flash memory products. It is one of the largest semiconductor manufacturers in the world. The company plays a significant role in the global electronics industry by providing advanced memory solutions for various applications, including consumer electronics, mobile devices, and data centers. SK Hynix is known for its innovation and technological advancements in memory products.

Application

The H26M62002JPR is a type of NAND flash memory, typically used in areas that require reliable data storage solutions. Its primary application areas include consumer electronics like smartphones, tablets, and digital cameras, where it helps in storing operating systems, applications, and user data. Additionally, it's employed in industrial devices for data logging and system boot processes. In computing, it serves in solid-state drives (SSDs) for faster data access and improved performance. Its compact size and efficiency make it suitable for use in embedded systems and Internet of Things (IoT) devices, supporting firmware storage and real-time data processing.

Package

The H26M62002JPR is a BGA (Ball Grid Array) package type. BGA packages are commonly used for integrated circuits and components that require a high-density interconnection.

Frequently Asked Questions


Q: What interface standard does this H26M62002JPR eMMC support?
A: It supports the eMMC 5.1 interface, ensuring high compatibility with modern embedded processors for seamless data transfer.


Q: What are the typical reading and writing speeds for this 32GB NAND Flash?
A: Sequential reading speed is up to 280MB/s, and sequential writing speed is up to 90MB/s, suitable for high-bandwidth storage applications.


Q: What is the operating temperature range of this Hynix memory component?
A: It operates reliably from -25°C to +85°C, making it suitable for industrial-grade embedded environments.


Q: What is the standby current consumption for the NAND and controller separately?
A: NAND standby current is 60µA, and controller standby current is 120µA, optimizing power efficiency for battery-powered devices.


Q: What are the input voltage requirements for the controller and NAND flash?
A: Controller VCCQ requires 1.7V~1.95V, while NAND VCCF requires 2.7V~3.6V for proper operation.


Q: Is this eMMC suitable for automotive or high-reliability storage systems?
A: With a -25°C to +85°C range and eMMC 5.1 protocol, it is appropriate for industrial and some commercial applications; verify specific automotive qualifications separately.


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