H5TC4G63EFR-PBA

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H5TC4G63EFR-PBA

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4Gbit 1.283V~1.45V 800MHz DDR3L SDRAM BGA-96(7.5x13) Memory (ICs) RoHS

  • HerstellerHYNIX

  • Herstellerteil #H5TC4G63EFR-PBA

  • Auf Lager5271

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Spezifikationen

Attribut Wert
Packaging BGA-96(7.5x13)
Clock Frequency 800MHz
Supply Current 26mA
Memory Format DDR3L SDRAM
Memory Size 4Gbit
Operating Temperature -40℃~+105℃
Voltage - Supply 1.283V~1.45V

Übersicht

Description

The H5TC4G63EFR-PBA is a high-performance, low-power DRAM (Dynamic Random Access Memory) device manufactured by Samsung. It belongs to the DDR3 (Double Data Rate 3) SDRAM family and is utilized primarily in consumer electronics, computing devices, and embedded systems. This memory chip features a 4Gb (gigabit) capacity, organized in a 512M x 8 configuration.
Key characteristics include a 1.5V operating voltage, which helps reduce power consumption, and support for data rates up to 1600 MT/s (mega-transfers per second). The device is designed for a range of applications, including mobile devices, laptops, and servers, offering enhanced speeds and efficiency compared to older memory technologies.
The H5TC4G63EFR-PBA also meets industry standards for reliability and performance, making it suitable for high-demand environments. Its compact design and robust features make it ideal for modern computing applications that require fast and efficient memory solutions.

Equivalent

The H5TC4G63EFR-PBA is a 4Gb DDR3 SDRAM chip. Equivalent products include:
1. H5TC4G63EFR-PBA (Samsung)
2. MT41K256M16HA-125 (Micron)
3. K4B4G1646E-BCK0 (SK Hynix)
4. D3N1608E-4G (Nanya)
Always verify compatibility regarding specifications and intended application.

Features

The H5TC4G63EFR-PBA is a 4GB DDR3 DRAM memory module produced by Hyundai. Key features include:
1. Capacity: 4GB, ideal for enhancing performance in various computing applications.
2. Type: DDR3 SDRAM, offering efficient performance and lower power consumption compared to previous generations.
3. Speed: Operates at a clock speed of 1600 MT/s, providing fast data transfer rates for improved system responsiveness.
4. Voltage: Typically operates at 1.5V, contributing to energy efficiency.
5. Configuration: Organized as 512Mx8 bits, allowing for flexible integration in various systems.
6. Package: Available in a compact FBGA (Fine Ball Grid Array) package, facilitating easy mounting on motherboards.
7. Operating Temperature: Designed for standard operating conditions, ensuring reliability across a range of environments.
This memory module is suitable for use in laptops, desktops, and other electronic devices, enhancing multitasking capabilities and overall performance.

Pinout

The H5TC4G63EFR-PBA is a DRAM memory chip produced by Samsung, specifically a 4Gbit (512MB) DDR3 SDRAM. It features a total of 78 pins.
The primary functions of the pin configurations include:
1. Data Lines: 16 I/O pins (DQ0-DQ15) for data transfer.
2. Address Lines: 13 address pins (A0-A12) for addressing memory locations.
3. Control Signals: Pins like CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), WE (Write Enable), and CKE (Clock Enable) for memory operation control.
4. Power Supply: VDD and VSS pins for power and ground connections.
5. Clock Input: CLK pin for inputting the clock signal needed for synchronous operation.
6. Mode Register Set (MRS): Pins for configuring the operating modes of the memory.
This configuration enables the chip to perform read and write operations efficiently within DDR3 memory architectures.

Manufacturer

The H5TC4G63EFR-PBA is manufactured by SK hynix Inc., a South Korean company. SK hynix is one of the world’s leading semiconductor manufacturers, specializing in memory products such as DRAM and NAND flash memory. Founded in 1983, the company has grown to become a key player in the global semiconductor market, supplying memory solutions for various applications including smartphones, computers, and server systems. SK hynix focuses on innovation and advanced technology, aiming to enhance performance and efficiency in memory storage. The H5TC4G63EFR-PBA, specifically, is a 4GB DDR3 DRAM chip designed for high-speed data processing in electronic devices.

Application

The H5TC4G63EFR-PBA is a 4 Gb DDR3 DRAM chip widely used in various applications, including consumer electronics, mobile devices, laptops, and servers. Its primary areas of application include smartphones, tablets, and netbooks, where it supports high-speed data processing and multitasking. Additionally, it is utilized in networking equipment, gaming consoles, and embedded systems, offering efficient memory solutions for performance-intensive tasks. The chip's low power consumption makes it suitable for battery-operated devices, enhancing energy efficiency in modern technology.

Package

The H5TC4G63EFR-PBA is packaged in a 78-ball, thin ball grid array (TBGA) format. This type of packaging is designed for high-density memory applications, offering efficient space utilization and improved thermal performance.

Frequently Asked Questions


Q: What is the memory density and type of the H5TC4G63EFR-PBA?
A: It is a 4Gbit DDR3L SDRAM, using low voltage 1.283V~1.45V supply, suitable for mobile and low-power applications.


Q: What is the maximum operating clock frequency of this memory?
A: The maximum clock frequency is 800MHz, delivering high-speed data transfer typical for DDR3L-1600 standard.


Q: Can this component operate in extended temperature environments?
A: Yes, it supports an industrial temperature range from -40°C to +105°C, ideal for harsh industrial or automotive designs.


Q: What is the typical current consumption under operation?
A: The typical supply current is 26mA, indicating low power consumption suitable for energy-efficient embedded systems.


Q: What package does the H5TC4G63EFR-PBA come in?
A: It is housed in a BGA-96 package with dimensions of 7.5mm x 13mm, commonly used for compact PCB layouts.


Q: Is this memory compatible with standard DDR3L controllers?
A: Yes, as a DDR3L SDRAM, it is fully backward compatible with DDR3L memory controllers and operates at 1.283V~1.45V.


Q: What applications is this Hynix 4Gb DDR3L best suited for?
A: It is ideal for networking equipment, industrial computing, and embedded systems requiring low power and wide temperature tolerance.


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