H5TQ4G83EFR-RDC

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H5TQ4G83EFR-RDC

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4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-78 Memory (ICs) RoHS

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Spezifikationen

Attribut Wert
Packaging FBGA-78
Clock Frequency 1.066GHz
Memory Format DDR3 SDRAM
Memory Size 4Gbit
Operating Temperature -40℃~+105℃
Voltage - Supply 1.425V~1.575V

Übersicht

Equivalent

The H5TQ4G83EFR-RDC is a 4Gb DDR3 SDRAM chip by SK Hynix. Equivalent alternatives include:
- Micron: MT41K512M8DA-107 (4Gb DDR3)
- Samsung: K4B4G1646E-BCMA (4Gb DDR3)
- Nanya: NT5CC256M16EP-EK (4Gb DDR3)
Ensure compatibility with voltage, speed (1066MHz), and pin configuration (96-ball FBGA) when substituting. Always verify datasheets for exact matches.

Features

The H5TQ4G83EFR-RDC is a 4Gb (512MB) DDR3L SDRAM chip with the following key features:
- Capacity: 4Gb (organized as 512M x 8)
- Voltage: Low-power DDR3L (1.35V, compatible with 1.5V)
- Speed: 1600Mbps (PC3L-12800)
- Density: 4 banks, 8-bit prefetch
- Timings: CL=11, tRCD=11, tRP=11
- Package: 78-ball FBGA
- Refresh: 64ms/8192 cycles
- Operating Temp: Commercial (0°C to 95°C)
- Applications: Embedded systems, networking, consumer electronics
It offers high-speed data transfer, low power consumption, and reliable performance for compact designs.

Pinout

The H5TQ4G83EFR-RDC is a 4Gb (512MB) DDR3L SDRAM chip from SK Hynix.
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array)
- Key Functions:
- 1.35V low-voltage operation (DDR3L)
- 8 internal banks
- Data rate: 800–1866 Mbps
- 16-bit I/O (x16 configuration)
- Supports auto-refresh & self-refresh
- CAS Latency (CL): 5–13 cycles
Commonly used in embedded systems, networking, and consumer electronics.

Application

The H5TQ4G83EFR-RDC is a 4Gb DDR3L SDRAM chip from SK Hynix, primarily used in:
- Consumer Electronics: Smart TVs, set-top boxes, and gaming consoles.
- Networking Equipment: Routers, switches, and modems.
- Embedded Systems: Industrial PCs, IoT devices, and automation controllers.
- Automotive Infotainment: In-vehicle displays and navigation systems.
- Mobile Devices: Tablets and low-power portable gadgets.
Its low power consumption (DDR3L) and high-speed performance (up to 1866 Mbps) make it suitable for applications requiring reliable, energy-efficient memory.

Package

The H5TQ4G83EFR-RDC is a 4Gb (512MB) DDR3 SDRAM chip in a 78-ball FBGA (Fine-pitch Ball Grid Array) package. It operates at 1.5V and is commonly used in embedded systems, networking, and consumer electronics. The package dimensions are typically 9mm x 9.5mm.

Frequently Asked Questions


Q: Is this HYNIX H5TQ4G83EFR-RDC suitable for industrial temperature applications?
A: Yes, its operating temperature range of -40℃ to +105℃ makes it ideal for industrial and automotive environments.


Q: What is the memory density and organization of this DDR3 SDRAM?
A: It has a 4Gbit density, typically organized as 512M x8, suitable for high-density memory designs.


Q: What voltage range does this component require for operation?
A: It requires a standard DDR3 supply voltage between 1.425V and 1.575V, ensuring compatibility with common DDR3 controllers.


Q: Does this part support a 1.066GHz clock frequency for high-speed data transfer?
A: Yes, it supports a 1.066GHz clock, corresponding to DDR3-2133 data rates for fast read/write operations.


Q: What is the physical packaging type of the H5TQ4G83EFR-RDC?
A: It comes in an FBGA-78 package, typically used in thin, space-saving PCB layouts for DRAM modules.


Q: Can this memory be used as a drop-in replacement for other 4Gb DDR3 chips?
A: Possibly, but verify pinout and timing parameters; this part uses a standard FBGA-78 DDR3 interface but consult your specific design.


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