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IPA029N06NXKSA1
+StücklisteMOSFET N-CH 60V 84A TO220-FP
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HerstellerInfineon-Technologien
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Herstellerteil #IPA029N06NXKSA1
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Datenblatt IPA029N06NXKSA1 DataSheet
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Paket PG-TO-220
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Auf Lager5025
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 84A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 2.9mOhm @ 84A, 10V |
| Vgs(th)(Max) @ Id | 3.3V @ 75µA |
| Gate Charge(Qg)(Max) @ Vgs | 66 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5125 pF @ 30 V |
| Power Dissipation (Max) | 38W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-FP |
Übersicht
Description
"Introduction to IPA029N06NXKSA1" likely refers to a specific technical component or product identifier. Without additional context, it's challenging to provide a detailed explanation, but here's a general approach:
The IPA029N06NXKSA1 could be a part number for an electronic component, such as a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) used in various electronic applications for switching and amplifying signals. These components are characterized by their voltage and current ratings, on-resistance, and other electrical parameters critical for engineers when designing circuits.
Such parts are integral to power management systems, automotive electronics, and consumer electronics, among other applications. They help control power efficiently and are essential for modern electronic devices' functionality.
For specific details like electrical characteristics, applications, and datasheets, one would need to consult the manufacturer's documentation or product catalog. If you have a specific application or context in mind, additional details would help tailor the explanation to your needs.
The IPA029N06NXKSA1 could be a part number for an electronic component, such as a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) used in various electronic applications for switching and amplifying signals. These components are characterized by their voltage and current ratings, on-resistance, and other electrical parameters critical for engineers when designing circuits.
Such parts are integral to power management systems, automotive electronics, and consumer electronics, among other applications. They help control power efficiently and are essential for modern electronic devices' functionality.
For specific details like electrical characteristics, applications, and datasheets, one would need to consult the manufacturer's documentation or product catalog. If you have a specific application or context in mind, additional details would help tailor the explanation to your needs.
Equivalent
The IPA029N06NXKSA1 is a power MOSFET from Infineon Technologies. Equivalent products from other manufacturers might include:
1. IRFZ44N (onsemi)
2. FDP6030BL (onsemi/Fairchild)
3. STP60NF06 (STMicroelectronics)
4. FQP30N06L (onsemi/Fairchild)
These equivalents are selected based on similar voltage and current ratings, but always verify the specifications for compatibility in your specific application.
1. IRFZ44N (onsemi)
2. FDP6030BL (onsemi/Fairchild)
3. STP60NF06 (STMicroelectronics)
4. FQP30N06L (onsemi/Fairchild)
These equivalents are selected based on similar voltage and current ratings, but always verify the specifications for compatibility in your specific application.
Features
The model number IPA029N06NXKSA1 refers to a specific electronic component, typically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). While detailed specifications can vary, typical features of a MOSFET like the IPA029N06NXKSA1 may include:
1. N-Channel MOSFET: It allows current to flow when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Usually designed to handle a specific voltage (e.g., 60V) and current (e.g., 29A).
3. Low On-Resistance: Designed to minimize power loss and increase efficiency, often measured in milliohms.
4. Fast Switching Speed: Provides efficient operation for high-frequency applications.
5. Thermal Management: May include features like a robust package for heat dissipation.
6. Protection Features: Includes over-temperature or over-current protection.
7. Applications: Common in power management, motor control, and DC-DC converters.
For exact specifications, refer to the manufacturer's datasheet or product documentation.
1. N-Channel MOSFET: It allows current to flow when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Usually designed to handle a specific voltage (e.g., 60V) and current (e.g., 29A).
3. Low On-Resistance: Designed to minimize power loss and increase efficiency, often measured in milliohms.
4. Fast Switching Speed: Provides efficient operation for high-frequency applications.
5. Thermal Management: May include features like a robust package for heat dissipation.
6. Protection Features: Includes over-temperature or over-current protection.
7. Applications: Common in power management, motor control, and DC-DC converters.
For exact specifications, refer to the manufacturer's datasheet or product documentation.
Pinout
The IPA029N06NXKSA1 is a power MOSFET manufactured by Infineon Technologies. It features a typical pin count of 3, which are typically designated as Gate (G), Drain (D), and Source (S). These are standard designations for MOSFETs, where:
1. Gate (G): This is the terminal used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): Current flows into the MOSFET through this terminal when it is in the 'on' state.
3. Source (S): Current exits the MOSFET through this terminal.
The IPA029N06NXKSA1 is part of Infineon's OptiMOS series and is designed for use in applications requiring high efficiency and low power loss, such as in automotive and industrial sectors. It supports applications up to 60V, with a low on-state resistance.
1. Gate (G): This is the terminal used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): Current flows into the MOSFET through this terminal when it is in the 'on' state.
3. Source (S): Current exits the MOSFET through this terminal.
The IPA029N06NXKSA1 is part of Infineon's OptiMOS series and is designed for use in applications requiring high efficiency and low power loss, such as in automotive and industrial sectors. It supports applications up to 60V, with a low on-state resistance.
Manufacturer
The IPA029N06NXKSA1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that focuses on designing, developing, and producing a wide range of semiconductor solutions. Founded in 1999 as a spin-off from Siemens AG, the company is headquartered in Neubiberg, near Munich, Germany. Infineon operates in various sectors, including automotive, industrial power control, power management and multimarket, and digital security solutions. The company is known for producing microcontrollers, power electronics, sensors, and security integrated circuits, among other products. Infineon's solutions are widely used in applications such as automotive electronics, renewable energy, industrial automation, consumer electronics, and more.
Application
The IPA029N06NXKSA1 is a N-channel MOSFET commonly used in various electronic applications. Key application areas include:
1. Power Management: Used in DC-DC converters, battery protection circuits, and voltage regulation due to its efficient power handling capabilities.
2. Switching Applications: Suitable for high-speed switching in applications such as motor drivers and relay replacement.
3. Automotive Electronics: Utilized in automotive systems for efficient power distribution and switching.
4. Consumer Electronics: Found in devices like power supplies and chargers, where efficient switching and power management are crucial.
5. Industrial Equipment: Used in machinery requiring reliable power control and distribution.
These applications leverage the MOSFET's low on-resistance and high-speed switching features.
1. Power Management: Used in DC-DC converters, battery protection circuits, and voltage regulation due to its efficient power handling capabilities.
2. Switching Applications: Suitable for high-speed switching in applications such as motor drivers and relay replacement.
3. Automotive Electronics: Utilized in automotive systems for efficient power distribution and switching.
4. Consumer Electronics: Found in devices like power supplies and chargers, where efficient switching and power management are crucial.
5. Industrial Equipment: Used in machinery requiring reliable power control and distribution.
These applications leverage the MOSFET's low on-resistance and high-speed switching features.
Package
The IPA029N06NXKSA1 is a MOSFET transistor from Infineon Technologies. It is typically supplied in a TO-263 package, also known as D²PAK, which is a surface-mount package designed for efficient heat dissipation and suitable for high-power applications.
