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IPB017N10N5LFATMA1
+StücklisteMOSFET N-CH 100V 180A TO263-7
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HerstellerInfineon-Technologien
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Herstellerteil #IPB017N10N5LFATMA1
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Auf Lager9420
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™-5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.7mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 4.1V @ 270µA |
| GateCharge(Qg)(Max)@Vgs | 195 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 840 pF @ 50 V |
| PowerDissipation(Max) | 313W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-7 |
