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IPD50P04P413ATMA1
+StücklisteMOSFET P-CH 40V 50A TO252-3
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HerstellerInfineon-Technologien
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Herstellerteil #IPD50P04P413ATMA1
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Datenblatt IPD50P04P413ATMA1 DataSheet
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Paket TO-252-3
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Auf Lager5441
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | OptiMOS™ |
| Part Status | Not For New Designs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 12.6mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 85µA |
| Gate Charge(Qg)(Max) @ Vgs | 51 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3670 pF @ 25 V |
| Power Dissipation (Max) | 58W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
Übersicht
Description
Equivalent
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) and a continuous drain current (I_D) suited for high-performance applications.
2. Low On-Resistance: This component offers low R_DS(on), which minimizes power losses during operation, enhancing efficiency.
3. Fast Switching: The device is optimized for rapid switching, improving performance in high-frequency circuits.
4. Thermal Performance: It is designed to handle thermal stress effectively, often featuring an enhanced package for better heat dissipation.
5. Robustness: The MOSFET is built to withstand high levels of stress, including overvoltage and overcurrent conditions.
6. Applications: Commonly used in power supplies, motor control, and other automotive or industrial applications where efficient power handling is critical.
This MOSFET is part of a range that balances performance with reliability, making it suitable for various demanding electronic applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the main current flows from the load to the MOSFET.
3. Source (S): The source is the pin through which current exits the MOSFET back to the ground or negative side of the power supply.
These pins are utilized for connecting the MOSFET into a circuit where it acts as a switch or amplifier. The IPD50P04P413ATMA1 is specifically designed for applications requiring efficient power management, such as in automotive or industrial applications.
Manufacturer
Application
1. Automotive Systems: Used in electric and hybrid vehicles for power management and motor control.
2. Industrial Automation: Employed in motor drives, inverters, and power supply systems.
3. Consumer Electronics: Utilized in power conversion and battery management systems.
4. Renewable Energy: Applied in solar inverters and wind turbine converters.
5. Telecommunications: Used in power amplifiers and base station power supplies.
These applications benefit from its low on-state resistance and high-speed switching capabilities.