IPT60R028G7XTMA1

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IPT60R028G7XTMA1

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MOSFET N-CH 600V 75A 8HSOF

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series CoolMOS™ G7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 75A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 28mOhm @ 28.8A, 10V
Vgs(th)(Max) @ Id 4V @ 1.44mA
Gate Charge(Qg)(Max) @ Vgs 123 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4820 pF @ 400 V
Power Dissipation (Max) 391W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-2

Übersicht

Description

The IPT60R028G7XTMA1 is a 600V, 28mΩ CoolMOS™ P7 power MOSFET from Infineon, designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): 28mΩ (typ.) for reduced conduction losses.
- High Voltage Rating: 600V, suitable for industrial and automotive applications.
- Fast Switching: Optimized for high-frequency operation (e.g., SMPS, PFC, motor drives).
- Robustness: Avalanche-rated and low gate charge (Qg) for improved thermal performance.
- Package: TO-220 (through-hole), ensuring easy mounting and heat dissipation.
Ideal for power supplies, inverters, and energy-efficient systems, this MOSFET balances performance and reliability. Check Infineon’s datasheet for detailed specs.

Equivalent

Equivalent products to IPT60R028G7XTMA1 (Infineon 600V, 28mΩ, TO-220) include:
- STP60NF06 (STMicroelectronics, 60V, 28mΩ, TO-220)
- IRFZ44N (Infineon, 55V, 22mΩ, TO-220)
- FQP50N06 (Fairchild/ON Semi, 60V, 22mΩ, TO-220)
Note: Check voltage/current ratings for exact replacements. For 600V, consider IRFP460 (500V, 27mΩ, TO-247) as a higher-voltage alternative.

Features

The IPT60R028G7XTMA1 is a 600V, 28mΩ CoolMOS™ P7 power MOSFET from Infineon, designed for high-efficiency applications. Key features include:
- Low RDS(on): 28mΩ (typ.) at 10V VGS, reducing conduction losses.
- High Voltage Rating: 600V, suitable for industrial and automotive systems.
- Fast Switching: Optimized gate charge (QG = 60nC) for high-frequency operation.
- Robustness: Avalanche-rated and low thermal resistance (RthJC = 0.5K/W).
- Package: TO-220, ensuring easy mounting and heat dissipation.
- Eco-Friendly: Halogen-free and RoHS-compliant.
Ideal for SMPS, motor drives, and PFC circuits, it balances efficiency and reliability.

Application

The IPT60R028G7XTMA1 is a 600V, 28mΩ CoolMOS™ power MOSFET from Infineon, optimized for high-efficiency switching applications. Key application areas include:
- Switched-Mode Power Supplies (SMPS) – Used in AC/DC and DC/DC converters.
- Solar Inverters – Enhances energy conversion efficiency.
- Motor Drives – Supports high-frequency switching in industrial and automotive systems.
- Charging Stations – Enables fast charging for EVs and portable devices.
- LED Lighting – Improves performance in high-power LED drivers.
Its low on-resistance and fast switching make it ideal for energy-efficient power electronics.

Package

The IPT60R028G7XTMA1 is a TO-247 package type. This robust, through-hole package is commonly used for high-power applications, offering excellent thermal and electrical performance. It features three leads and is designed for efficient heat dissipation, making it suitable for power transistors and MOSFETs in demanding environments.

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