IRF100S201

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IRF100S201

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MOSFET N-CH 100V 192A D2PAK

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Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series HEXFET®, StrongIRFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 192A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 4.2mOhm @ 115A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 255 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 9500 pF @ 50 V
Power Dissipation (Max) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3

Übersicht

Description

The IRF100S201 is a Power MOSFET designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 201A (pulsed)
- Low On-Resistance (RDS(on)): ~1.8mΩ (typical)
- Fast Switching Speed: Optimized for minimal switching losses
- Package: TO-220AB (through-hole)
Commonly used in DC-DC converters, motor drives, and power supplies, it offers robust performance in high-current environments. Ensure proper heat sinking due to its high power dissipation capability.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IRF100S201 (a 100V, 20A N-channel MOSFET) include:
- IRF100B201 (similar specs, same series)
- IRF1404 (100V, 169A, higher current)
- IRF540N (100V, 33A, common alternative)
- STP16NF06 (60V, 16A, lower rating)
- FQP30N100 (100V, 30A, higher current)
Check datasheets for exact compatibility in your circuit.

Features

The IRF100S201 is a 200V, 100A N-channel power MOSFET with the following key features:
- Voltage Rating: 200V (VDSS)
- Current Rating: 100A (ID) at 25°C
- Low On-Resistance (RDS(on)): Typically 2.0 mΩ at VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- High Power Handling: Suitable for motor drives, inverters, and DC-DC converters
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-220AB (through-hole) for easy mounting
This MOSFET is designed for high-current, high-voltage applications, offering low conduction losses and efficient switching performance.

Pinout

The IRF100S201 is a power MOSFET with a 3-pin (TO-220 package) configuration:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference terminal.
Key Functions:
- Voltage Rating: 100V (Drain-Source).
- Current Handling: Up to 84A continuous (at 25°C).
- Low On-Resistance (RDS(on)): ~2.0 mΩ (typical at VGS=10V).
- Fast Switching: Suitable for high-efficiency power applications (e.g., motor drives, DC-DC converters).
Note: Always refer to the datasheet for precise specifications and thermal considerations.

Package

The IRF100S201 is a power MOSFET typically available in a TO-220AB package. This through-hole package is widely used for its robustness, ease of mounting, and efficient heat dissipation. It features three leads (gate, drain, source) and a metal tab for heatsink attachment, making it suitable for high-power applications. The TO-220AB package is standard for many power semiconductors.

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