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IRF2805PBF
+StücklisteMOSFET N-CH 55V 75A TO220AB
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HerstellerInfineon-Technologien
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Herstellerteil #IRF2805PBF
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Datenblatt IRF2805PBF DataSheet
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Paket TO-220-3
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Auf Lager2643
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 75A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.7mOhm @ 104A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 230 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5110 pF @ 25 V |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Übersicht
Description
The IRF2805PBF is a power MOSFET designed for high-efficiency switching applications. It is part of the HEXFET® Power MOSFET family, known for its low on-resistance and fast switching capabilities. With a voltage rating of 55V and a continuous drain current of 82A, it is suitable for various power management and motor control applications.
The MOSFET is housed in a TO-220 package, which provides efficient heat dissipation and easy mounting to heatsinks. Its silicon construction ensures robustness and reliability, while the lead-free, RoHS-compliant packaging makes it environmentally friendly.
Key features include a low gate charge, enhancing its performance in high-frequency applications, and a fully avalanche-rated design, which ensures it can withstand high-energy pulses. Typically used in DC-DC converters, power supplies, and automotive applications, the IRF2805PBF is valued for its balance of performance and cost-effectiveness.
Overall, the IRF2805PBF is a versatile and dependable component for engineers seeking efficient power management solutions in a compact form factor.
The MOSFET is housed in a TO-220 package, which provides efficient heat dissipation and easy mounting to heatsinks. Its silicon construction ensures robustness and reliability, while the lead-free, RoHS-compliant packaging makes it environmentally friendly.
Key features include a low gate charge, enhancing its performance in high-frequency applications, and a fully avalanche-rated design, which ensures it can withstand high-energy pulses. Typically used in DC-DC converters, power supplies, and automotive applications, the IRF2805PBF is valued for its balance of performance and cost-effectiveness.
Overall, the IRF2805PBF is a versatile and dependable component for engineers seeking efficient power management solutions in a compact form factor.
Equivalent
The IRF2805PBF is a power MOSFET. Equivalent products include:
1. STMicroelectronics STP150NF75
2. Vishay SiHP28N50D
3. ON Semiconductor NTP10N50
4. Infineon IPP50R280CE
These equivalents are selected based on similar voltage and current ratings, package type, and performance characteristics. Always verify specifications with the manufacturer's datasheet to ensure compatibility for your specific application.
1. STMicroelectronics STP150NF75
2. Vishay SiHP28N50D
3. ON Semiconductor NTP10N50
4. Infineon IPP50R280CE
These equivalents are selected based on similar voltage and current ratings, package type, and performance characteristics. Always verify specifications with the manufacturer's datasheet to ensure compatibility for your specific application.
Features
The IRF2805PBF is an N-channel power MOSFET designed for high-efficiency and robust performance in various applications. Key features include:
1. Voltage and Current Ratings: The device typically operates with a drain-source voltage (V_DS) of 55V and supports a continuous drain current (I_D) of up to 82A.
2. Low On-Resistance: It exhibits a low R_DS(on) value, ensuring minimal power loss and improved efficiency in switching applications.
3. High-Speed Switching: The MOSFET supports fast switching speeds, making it suitable for high-frequency applications.
4. Thermal Performance: The TO-220 packaging enhances thermal management, allowing effective heat dissipation.
5. Ruggedness: The IRF2805PBF is designed to handle high power and energy levels, providing robustness against transient voltage spikes.
6. Applications: Commonly used in power supplies, motor drives, DC-DC converters, and other power management circuits.
7. RoHS Compliant: The "PBF" suffix indicates that it is lead-free and RoHS compliant, adhering to environmental safety standards.
These features make the IRF2805PBF a versatile choice for designers seeking reliable performance in power electronics.
1. Voltage and Current Ratings: The device typically operates with a drain-source voltage (V_DS) of 55V and supports a continuous drain current (I_D) of up to 82A.
2. Low On-Resistance: It exhibits a low R_DS(on) value, ensuring minimal power loss and improved efficiency in switching applications.
3. High-Speed Switching: The MOSFET supports fast switching speeds, making it suitable for high-frequency applications.
4. Thermal Performance: The TO-220 packaging enhances thermal management, allowing effective heat dissipation.
5. Ruggedness: The IRF2805PBF is designed to handle high power and energy levels, providing robustness against transient voltage spikes.
6. Applications: Commonly used in power supplies, motor drives, DC-DC converters, and other power management circuits.
7. RoHS Compliant: The "PBF" suffix indicates that it is lead-free and RoHS compliant, adhering to environmental safety standards.
These features make the IRF2805PBF a versatile choice for designers seeking reliable performance in power electronics.
Pinout
The IRF2805PBF is a power MOSFET designed by Infineon Technologies. It typically comes in a TO-220 package, which has three pins. Here is a concise description of the pin functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): The drain carries the main current of the MOSFET. It's connected to the load in most applications.
3. Source (S): The source pin is where the current enters the MOSFET. It is often connected to ground in many configurations.
The IRF2805PBF is known for its high current handling capability and low on-resistance, making it suitable for applications like high-power switching and motor control.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): The drain carries the main current of the MOSFET. It's connected to the load in most applications.
3. Source (S): The source pin is where the current enters the MOSFET. It is often connected to ground in many configurations.
The IRF2805PBF is known for its high current handling capability and low on-resistance, making it suitable for applications like high-power switching and motor control.
Manufacturer
The IRF2805PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that produces a wide range of electronic components. The company is known for its focus on automotive, industrial, and power management applications, providing products such as microcontrollers, power semiconductors, sensors, and security ICs. Infineon was originally a part of Siemens AG before becoming an independent entity. It is recognized for its innovation in semiconductors and plays a significant role in advancing technologies such as energy efficiency, mobility, and security solutions.
Application
The IRF2805PBF is a N-channel MOSFET that is commonly used in applications requiring high efficiency and fast switching. Key application areas include power supply designs, motor control systems, DC-DC converters, and inverters. It is often utilized in automotive systems and industrial equipment for managing power loads. Additionally, its robust design and ability to handle high currents make it suitable for use in battery management systems and photovoltaic inverters. The IRF2805PBF is also used in audio amplifiers and various consumer electronics where efficient power management is critical.
Package
The IRF2805PBF is a MOSFET in a TO-220 package. This package type is commonly used for power semiconductor devices, offering efficient heat dissipation, easy mounting, and reliable performance for various applications.
