IRF2807PBF

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IRF2807PBF

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MOSFET N-CH 75V 82A TO220AB

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Spezifikationen

Attribut Wert
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain(Id) @ 25°C 82A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 13mOhm @ 43A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 160 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3820 pF @ 25 V
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Übersicht

Description

The IRF2807PBF is a N-channel MOSFET from Infineon, designed for high-power applications. Key features:
- Voltage Rating: 75V
- Current Rating: 82A (continuous)
- Low On-Resistance (RDS(on)): 8.5mΩ (max at 10V VGS)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220AB (through-hole)
Common uses include DC-DC converters, motor drives, and power management in automotive, industrial, and renewable energy systems. It operates efficiently with a gate threshold voltage (VGS(th)) of 2-4V and is avalanche-rated for ruggedness.
Pros: High current handling, low conduction losses.
Cons: Requires proper heat dissipation due to power dissipation limits.
For optimal performance, ensure adequate gate drive (≥10V) and thermal management.

Equivalent

Equivalent products to the IRF2807PBF (N-channel MOSFET, 75V, 82A, 8.7mΩ) include:
- IRF2807SPBF (Same specs, different package)
- IRFB3206PBF (75V, 120A, 6.0mΩ)
- IRFB3307PBF (75V, 120A, 5.6mΩ)
- STP80NF75 (75V, 80A, 9.0mΩ)
- FDP8878 (80V, 120A, 5.3mΩ)
Check datasheets for exact compatibility.

Features

The IRF2807PBF is an N-channel power MOSFET with the following key features:
- Voltage Rating: 75V
- Current Rating: 82A (continuous), 330A (pulsed)
- Low On-Resistance (RDS(on)): 8.5 mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Gate Charge (Qg): 110nC (typical)
- Avalanche Energy Rated: Robust for inductive loads
- Package: TO-220AB (through-hole)
- Applications: Power supplies, motor control, DC-DC converters
It offers high current handling, low conduction losses, and reliable performance in power electronics.

Pinout

The IRF2807PBF is a Power MOSFET in a TO-263AB (D2PAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current-carrying terminal (connected to the load).
3. Source (S) – Common return path for current.
Key Features:
- N-Channel MOSFET
- 75V Drain-Source Voltage (VDS)
- 82A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 8.5mΩ max)
- Logic-Level Gate Drive (4V threshold)
Commonly used in power switching, motor control, and DC-DC converters.

Application

The IRF2807PBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC systems.
2. Motor Control – Drives motors in automotive, industrial, and robotics applications.
3. Inverters – Converts DC to AC in solar power systems and UPS units.
4. LED Drivers – Controls current in high-power LED lighting.
5. Automotive Systems – Used in electronic control units (ECUs) and battery management.
Its low on-resistance and high current handling (75V, 82A) make it ideal for high-efficiency, high-power applications.

Package

The IRF2807PBF is packaged in a TO-220AB through-hole type. This package is widely used for power MOSFETs, offering good thermal performance and ease of mounting on heat sinks. It has three leads (gate, drain, source) and is suitable for high-power applications. The "PBF" suffix indicates lead-free (RoHS compliant) construction.

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